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SHIKUES SK2302AAT
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- SHIKUES SK2302AAT
- Type
- SHIKUES
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SHIKUES
- Electronic Component
- SK2302AAT
- Electronic Component
- 1
- Package
- SOT-523
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.028g
- Electronic Component
- 1
- Electronic Component
- BM0230855872
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 350mW
- Gate Voltage(Vgs)
- ±8V
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SK2302AAT 产品概述
产品名称: SK2302AAT
商品分类: 场效应管 (MOSFET)
品牌: SHIKUES（时科）
基础参数
- 功率(Pd): 350mW
- 导通电阻(RDS(on) @ Vgs, Id): 70mΩ @ 2.5V, 1A
- 工作温度: -55℃ ~ +150℃
- 漏源电压(Vdss): 20V
- 类型: 1个N沟道
- 连续漏极电流(Id): 2.1A
- 阈值电压(Vgs(th) @ Id): 650mV @ 50μA
- 封装: SOT-523
产品特性
SK2302AAT是一款高性能的N沟道MOSFET，专为各种电子应用设计。其最大漏源电压为20V，使其非常适合在低压环境中工作。具有良好的导通特性，RDS(on)低至70mΩ于2.5V和1A的条件下，确保在功率管理中降低能量损耗，从而提高能效。
其最大连续漏极电流为2.1A，适合应用于电流要求相对较低的电路。阈值电压650mV使得该MOSFET在低电压驱动条件下仍能保证可靠的开关特性。该产品的工作温度范围从-55℃到+150℃，使其适应极端环境，能够在各种工作条件下保持稳定性能。
应用场景
SK2302AAT广泛应用于多个领域，尤其在移动设备、消费电子、以及工业控制中的功率开关和放大电路中表现出色。常见的具体应用包括：
- 电源管理: 在低压电源转换器和DC-DC调节器中，作为开关元件实现高效电源转换，降低电源损耗。
- 驱动电路: 可用于驱动小型电机、电磁阀和继电器等负载，为其提供JN(低噪音)启动和停止控制。
- 开关电路: 在硬件系统中用作信号开关或控制开关，提供高效的开关性能和较低的控制电压。
- LED驱动: 在LED照明系统中，作为开关元件用于调节LED光源的开关与亮度控制。
性能优势
SK2302AAT具备以下明显优势：
- 低导通电阻: 有效降低芯片在开关状态下的功耗，提升整体能效，对延长设备使用寿命有显著作用。
- 高温工作能力: 其广泛的工作温度范围使得其能够在高温及恶劣环境下正常工作，确保了系统的稳定性与可靠性。
- 紧凑封装: SOT-523封装，适合高密度线路板布局，节省空间并提高设计灵活性。
总结
SK2302AAT作为SHIKUES（时科）推出的一款N沟道MOSFET，以其优秀的电气特性和广泛的适用性，成为电子设计师们在进行功率管理和控制时的理想选择。无论是在消费类电子产品、工业自动化、还是在汽车电子中，该元器件均能满足高性能与高可靠性的需求，是优化电子系统设计的重要组成部分。为了实现更高效的电子电路设计，SK2302AAT将是您理想的选择。
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