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SHIKUES SK02N06E
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- SHIKUES SK02N06E
- Type
- SHIKUES
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SHIKUES
- Electronic Component
- SK02N06E
- Electronic Component
- 1
- Package
- SOT-223
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.268g
- Electronic Component
- 1
- Electronic Component
- BM0264743401
- Operating Temperature
- 55℃~+150℃
- Gate Voltage(Vgs)
- ±20V
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 60V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SK02N06E 产品概述
一、产品简介
SK02N06E 是一款由 SHIKUES（时科）推出的 N 沟道功率 MOSFET，封装为 SOT-223。器件耐压为 60V，适用于中低功率开关和线性控制场合。体积小、导通损耗低，适合在空间受限且需一定散热能力的电源与驱动电路中使用。
二、主要参数
- 类型：N 沟道 MOSFET
- 漏源电压 Vdss：60V
- 连续漏极电流 Id：2.2A
- 导通电阻 RDS(on)：86mΩ @ Vgs = 10V
- 阈值电压 Vgs(th)：2.5V（典型）
- 栅极耐压 Vgs：±20V
- 工作温度范围：-55℃ ~ +150℃
- 封装：SOT-223
- 品牌：SHIKUES（时科）
- 数量：1 只
三、性能特点
- 低导通电阻：在 Vgs=10V 时 RDS(on)=86mΩ，导通损耗低，适合直流电源开关与小功率电机驱动。
- 中等耐压能力：60V 的耐压可覆盖大多数 12V–48V 系统中的低压侧开关需求。
- 良好热性能：SOT-223 封装相较于小型封装有更好的散热路径，便于在 PCB 上通过铜箔散热提升功率处理能力。
- 宽工作温度：适用于工业级温度环境。
四、典型应用
- DC-DC 转换器（同步/非同步开关）
- 电源开关和负载切换（如电池管理、通断控制）
- 小功率电机与步进电机驱动
- 灯驱动、电源管理模块与保护电路
五、封装与散热建议
SOT-223 在 PCB 上具有较好的导热路径，建议在 PCB 下层布置大面积铜箔（散热填充区）并通过过孔连接多层铜层以提升散热能力。尽量缩短源、漏引脚与负载之间的走线，减小寄生电阻和电感。对于连续大电流工作，应评估结-环境热阻并进行适当降额处理。
六、注意事项与推荐使用条件
- 栅极驱动：若需最低 RDS(on)，应采用接近 10V 的栅极驱动电压；在 5V 或更低逻辑电平下导通性能需通过试验确认。
- ESD 与静电防护：为 MOSFET，易受静电损伤，装配与调试时应采取防静电措施。
- 工作边界：勿超出 Vgs±20V、Vdss 60V 及结温限制；在高温或高电流场合需考虑热退让。
- 测试与选型：建议在目标电路中进行实际功耗、温升与开关损耗测试，以确定器件是否满足长期可靠性要求。
总体而言，SK02N06E 适合对体积、成本和散热均有一定要求的中低功率开关场合，是一种性价比较高的通用型 N 沟道 MOSFET。
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