WMSIC Electronic Components

SHIKUES MMBT5551

ModelMMBT5551
PackageSOT-23
BrandSHIKUES
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
SHIKUES MMBT5551
Type
SHIKUES
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SHIKUES
Electronic Component
MMBT5551
Electronic Component
1
Package
SOT-23
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.035g
Electronic Component
1
Electronic Component
BM0230855875
Operating Temperature
55℃~+150℃
Transistor Type
NPN
Power Dissipation(Pd)
225mW
Electronic Component
Electronic Component
Electronic Component
3000
Collector Current(Ic)
600mA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MMBT5551 产品概述

一、产品简介

MMBT5551(SHIKUES/时科 版本)是一款高压 NPN 小信号/开关三极管,SOT-23 封装,适用于需要较高耐压和中等电流的便携及工业电子电路。依据给定参数:直流电流增益 hFE = 80(Ic=10mA,Vce=5V),集电极-射极击穿电压 Vceo = 140V,最大集电极电流 Ic = 600mA,集电极截止电流 Icbo = 50nA,耗散功率 Pd = 225mW,工作温度 -55℃~+150℃,集电极-射极饱和电压 VCE(sat) = 250mV(测量点 50mA、5mA),射基极击穿电压 Vebo = 6V。注:产品描述中亦有“350mW / 160V”规格的表述,实际选型时请以出货 Datasheet 为准。

二、主要性能特点

  • 高耐压:Vceo 高达 140V,适合高压侧开关与电平移位。
  • 中等电流驱动能力:Ic 最大 600mA,能驱动较大负载(须注意封装散热限制)。
  • 低漏电流:Icbo 仅 50nA,有利于提高静态性能。
  • 低饱和压降:VCE(sat) ≈ 250mV(在指定测试条件下),开关损耗较小。
  • 宽温度范围:-55℃ 至 +150℃,适应恶劣环境。

三、典型应用场景

  • 低功耗高压开关与驱动电路(如继电器驱动、固态开关)。
  • 高频脉冲电路与信号放大(放大倍数稳定,适中功率)。
  • 电源管理中的电平转换与箝位保护。
  • 小型功率输出、缓冲器与保护电路。

四、封装与热管理

本器件采用 SOT-23 小封装,体积小但散热能力有限。Pd 标称 225mW(请确认具体数据表),因此在设计 PCB 时应:

  • 增大集电极/地焊盘的铜箔面积以提高散热;
  • 使用多层 PCB 的内层接地或散热通孔以降低结温;
  • 在高占空比或连续大电流情况下加入外部散热或选用功率更高的封装。

五、使用注意事项

  • 基极限流:驱动时需串联基极电阻以限制基流并避免过驱致损。
  • 禁止反向基射击穿:Vebo = 6V,避免基-射极承受较高反向电压。
  • 考虑饱和区驱动:若作为开关在饱和导通,应按强制β(如10~20)计算基流以确保低 VCE(sat)。
  • 焊接与储存:遵循 SOT-23 的回流焊工艺规范与静电防护措施。

六、典型电路参考

作为开关:若需开关 50mA 负载,按 hFE=80 计算基流 ~0.63mA,但为保证饱和,建议按强制β=10,基流约 5mA。若驱动电源为 5V,则基阻 Rb ≈ (5V−0.7V)/5mA ≈ 860Ω(可取 820Ω 或 1kΩ)。该计算为经验值,实际需根据电路温度与负载验证。

结语:MMBT5551(SHIKUES)在高压与中等电流应用中表现平衡,适合体积受限的电子产品。最终选型与可靠性验证请参考厂商完整 Datasheet 及样片测试结果。

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