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SHIKUES SKQ90N10AD
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- SHIKUES SKQ90N10AD
- Type
- SHIKUES
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SHIKUES
- Electronic Component
- SKQ90N10AD
- Electronic Component
- 1
- Package
- PDFN-8L(5x6)
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.17g
- Electronic Component
- 1
- Electronic Component
- BM0230855831
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 89W
- Gate Voltage(Vgs)
- ±20V
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SKQ90N10AD 产品概述
一、产品简介
SKQ90N10AD 为 SHIKUES（时科）推出的一款大电流 N 沟道功率 MOSFET，额定漏源电压 100V，连续漏极电流 93A，适用于高压开关和功率转换场合。器件采用 PDFN-8L(5×6) 紧凑封装，兼顾低导通损耗与良好散热性能，适合自动化电源、逆变器、马达驱动和汽车电子等应用。
二、主要参数
- 类型：N 沟道 MOSFET
- 漏源电压 Vdss：100V
- 连续漏极电流 Id：93A
- 导通电阻 RDS(on)：约 5mΩ（标称 5.0mΩ@Vgs=4.5V；参考 5.2mΩ@Vgs=10V 的典型测试值，请以厂商数据表为准）
- 阈值电压 Vgs(th)：2V（典型）
- 推荐工作温度范围：-55℃ ~ +150℃
- 封装：PDFN-8L (5×6)
- 数量：1 个（单片器件）
三、性能与优势
- 低导通电阻：约 5mΩ 的低 RDS(on) 降低导通损耗，提升效率，适合高电流路径应用。
- 高压等级：100V 额定值满足中高压转换与电机驱动场景需求。
- 紧凑封装：PDFN-8L(5×6) 在保持散热性能的同时节省 PCB 面积，便于模块化设计。
- 宽温度范围：-55℃ 到 +150℃ 的工作温度适用于工业级和汽车级环境。
四、典型应用
- DC-DC 升降压转换器、同步整流
- 逆变器与太阳能并网设备
- 电机控制与电动工具驱动器
- 汽车电子（辅助电源、车载逆变）
- UPS、不间断电源及高效率开关电源
五、使用建议
- 驱动电压：为获得最佳导通特性，建议驱动电压满足或接近数据表给定的测试条件（通常 Vgs=10V 或 4.5V）。
- 散热设计：尽管封装紧凑，仍需合理设计散热铜箔与过孔，将热量有效传导至散热片或大面积地层。
- PCB 布局：电源回路尽量短、宽以降低寄生阻抗；栅极驱动走线尽量短且并联适当阻尼以抑制振铃。
- 保护措施：建议配合合适的过流、过温及防反向二极管或软关断电路以延长可靠性。
六、注意事项
在并联多片使用时需考虑 RDS(on) 区分与电流均流措施；器件参数随温度、驱动电压变化较大，设计时请参考完整数据手册并在目标工况下进行热仿真与实测验证。
七、总结
SKQ90N10AD 是一款面向中高压、大电流应用的 N 沟道 MOSFET，兼具低导通损耗与紧凑封装优势，适合要求高效率与体积受限的功率电子设计。选型与布局时请依据完整器件规范书进行详细验证，以保证长期稳定运行。
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