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SHIKUES SK2301AW
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- SHIKUES SK2301AW
- Type
- SHIKUES
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SHIKUES
- Electronic Component
- SK2301AW
- Electronic Component
- 1
- Package
- SOT-323
- Electronic Component
- 1 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.92g
- Electronic Component
- 1
- Electronic Component
- BM0257628047
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 350mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
- Capacitor(Ciss)
- 405pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SK2301AW 产品概述
一、概述
SK2301AW 是时科（SHIKUES）推出的一款 P 沟道场效应管（P-MOSFET），采用小型 SOT-323 封装，面向便携式与空间受限的电源管理与负载开关应用。器件耐压为 20V，适合低压电源轨的高端开关与保护电路。
二、主要规格
- 极性：P 沟道（P-channel）
- 漏源电压 Vdss：20V
- 连续漏极电流 Id：3A
- 导通电阻 RDS(on)：110mΩ @ Vgs = 4.5V, Id = 3A
- 功耗 Pd：350mW
- 阈值电压 Vgs(th)：约 1V @ IG = 250μA
- 栅极电荷 Qg：约 10nC @ Vgs = 10V
- 输入电容 Ciss：405pF @ 10V
- 反向传输电容 Crss：55pF @ 10V
- 工作温度范围：-55 ℃ ~ +150 ℃
- 封装：SOT-323，单个封装设计
三、性能特点与典型应用
- 小封装、低电压：SOT-323 封装适合板上空间受限的设计。20V 耐压与较低的 RDS(on) 使其适用于电池供电系统与 USB/PMIC 周边的高端开关。
- 适合高端开关与电源路径控制：作为 P 沟道 MOSFET，可直接用于正高端开关、电池切换、反向保护及低功耗负载断开。
- 开关损耗与驱动：Qg ≈ 10nC、Ciss ≈ 405pF 表明器件具有中等栅极驱动需求，驱动速度与开关损耗受驱动能力影响，适合低频或中速开关场景。
四、封装与热管理建议
- 功耗 Pd = 350mW，封装热阻较大，持续大电流工作时需注意结温上升。建议在 PCB 布局中配合适当的铜箔散热（加大源极/漏极散热区）或使用多层板热通孔以降低结温。
- 短走线、增大焊盘面积可减小接触电阻与导线损耗，有利于提高可靠性。
五、使用注意事项
- 驱动电压：RDS(on) 标定在 Vgs = 4.5V，若使用逻辑电平或微控制器直接驱动，需确认实际 Vgs 能达到理想导通状态。
- Vgs 最大额定值请参照完整数据手册，在设计中避免超过最大栅源电压以防损伤。
- 开关瞬态：Crss（55pF）影响米勒效应，快速切换时可能出现电压反冲与延迟，建议适当串联栅极电阻并做好布局抑制振铃。
- ESD 与焊接：SOT-323 为小型封装，装配与回流焊时注意热循环与防静电措施。
SK2301AW 以其小体积、适中的导通电阻与便捷的高端开关特性，适合对板上空间与功耗有严格限制的便携式电源管理与负载控制场合。更多详细限制参数与典型应用电路，请参考时科（SHIKUES）完整产品资料与样片评估。
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