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Slkor MMBT2907
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Slkor MMBT2907
- Type
- SLKOR
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SLKOR
- Electronic Component
- MMBT2907
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 PNP
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.033g
- Electronic Component
- 1
- Electronic Component
- BM0230872014
- Transistor Type
- PNP
- Frequency(f T)
- 200MHz
- Power Dissipation(Pd)
- 250mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Collector Current(Ic)
- 600mA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MMBT2907 产品概述
一、简介
MMBT2907 为 PNP 型小信号/功率三极管，品牌：Slkor（萨科微），封装为 SOT-23。器件面向通用开关与放大用途，规格平衡，适合空间受限的表贴电路板设计。
二、主要参数
- 晶体管类型：PNP
- 集电极电流 Ic：600 mA（峰值能力）
- 集射极击穿电压 Vceo：40 V
- 耗散功率 Pd：250 mW（SOT-23 封装散热极限）
- 直流电流增益 hFE：100@150 mA, 10 V
- 特征频率 fT：200 MHz（高频响应良好）
- 集电极截止电流 Icbo：20 nA
- 集电极饱和电压 VCE(sat)：400 mV
- 射基极击穿电压 Vebo：5 V
三、器件特性与优势
- 高频特性（fT≈200 MHz）使其在射频前级或高频切换场合表现良好。
- 高 hFE 在中等电流区（150 mA）提供较小基极驱动电流需求，有利于降低驱动器负担。
- 低漏电（Icbo≈20 nA）适合低静态电流的电路设计。
四、使用与热管理注意
尽管 Ic 最高可达 600 mA，但封装耗散功率仅 250 mW，长期连续工作电流必须受限于功耗与结温（Tj）限制。设计时应：
- 根据 Vce 与 Ic 估算实际耗散 Pd = Vce × Ic，确保 Pd < 250 mW（考虑环境与 PCB 散热系数）。
- 避免反向基-射击穿（Vebo ≤ 5 V），基极反向电压应加以限制。
- 引脚排列与封装热阻请参照厂方数据手册，布局时加大铜箔、增加散热通孔可改善热性能。
五、典型应用场景
- 高侧开关与电源反向电路（PNP 便于拉高侧控制）
- 小电流电机驱动、继电器驱动（需按功耗限制设计）
- 低噪声放大器、信号放大与电平移位
- 高频开关与缓冲器件
六、选型与封装信息
SOT-23 紧凑封装利于表贴工艺与高密度布局。订购时请确认 Slkor 的完整料号与数据手册，并参考器件最大额定值与封装热阻以匹配目标应用。若需更高耗散能力或更大电流，应选用功率封装或并联设计并评估均流与热性能。
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