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SUPSiC GC3D06060A
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- SUPSi C GC3D06060A
- Type
- SUPSIC
- Minimum package
- 1000 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SUPSIC
- Electronic Component
- GC3D06060A
- Electronic Component
- 1
- Package
- TO-220-2
- Electronic Component
- Diode
- Electronic Component
- 3.006g
- Electronic Component
- 1
- Electronic Component
- BM0227373329
- Current
- 19A
- Diode
- 1
- Current(Ir)
- 33uA@600V
- (Vf)
- 1.7V@6A
- Electronic Component
- 55℃~+175℃
- Electronic Component
- Electronic Component
- Electronic Component
- 1000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
GC3D06060A 产品概述 — SUPSiC (国晶微半导体)
一、产品简介
GC3D06060A 是国晶微半导体（SUPSiC）推出的一款600V级碳化硅（SiC）肖特基整流二极管，采用 TO-220-2 封装，面向中高功率开关电源及电力电子系统。器件能在高结温下稳定工作，兼具低正向压降与极低反向漏电特性，适合替代传统硅整流器以降低导通损耗和开关损耗。
二、主要参数
- 品牌：SUPSiC（国晶微半导体）
- 型号：GC3D06060A
- 直流整流电流（If）：19A
- 直流反向耐压（Vr）：600V
- 正向压降（Vf）：1.7V @ 6A
- 非重复峰值浪涌电流（Ifsm）：63A
- 反向电流（Ir）：33μA @ 600V
- 工作结温范围：-55℃ ～ +175℃
- 封装：TO-220-2（易于散热安装）
三、特性与优势
- 低正向压降：Vf≈1.7V（6A），在中高电流下显著降低导通功耗，提升效率。
- 高温工作能力：结温最高175℃，适应高温工作环境与紧凑散热设计。
- 低反向漏流：在600V下仅33μA，利于高压回路的稳态能耗控制。
- 强抗浪涌：Ifsm=63A，可承受短时冲击性过流。
- 快速开关：肖特基结构几乎无反向恢复，减少开关损耗与系统电磁干扰（EMI）。
四、封装与热管理
TO-220-2 封装便于通过后挂片或螺栓固定至散热器，实现低热阻路径。建议：
- 在高电流应用中配合合适尺寸散热器或风冷，以保持结温在安全范围内。
- 采用良好导热界面材料并确保紧固力矩均匀，减少热阻。
- PCB布局时将大铜面积热滩与散热孔结合，利于整体散热。
五、典型应用场景
- 开关电源整流与自由轮回路（SMPS、PFC）
- 太阳能逆变器及充电桩整流前端
- 不间断电源（UPS）与备用电源系统
- 工业电机驱动与电源模块
- 电动汽车车载充电器与DC-DC变换器
六、使用建议与可靠性注意事项
- 为保证长期可靠性，应为器件留出足够的电压裕量，应对开路瞬态尖峰（可并联TVS等抑制器）。
- 并联使用时需注意电流均衡与热均衡，建议串联小阻值或使用匹配器件并确保同一散热条件。
- 焊接与回流工艺应遵循 TO-220 的温度曲线，避免长期高温导致器件热应力。
- 在关键系统中建议做热仿真与实际测温验证，确保结温不超过规格上限。
GC3D06060A 以其高温稳定性、低导通损耗与良好浪涌能力，是提升中高压电力电子效率与可靠性的优选器件。若需进一步的典型曲线、热阻数据或封装引脚图，可索取详细数据手册以便设计审核。
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