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SUPSiC GC3M0075120D
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- SUPSi C GC3M0075120D
- Type
- SUPSIC
- Minimum package
- 450 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SUPSIC
- Electronic Component
- GC3M0075120D
- Electronic Component
- 1
- Package
- TO247-3
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 8.134g
- Electronic Component
- 1
- Electronic Component
- BM0227373152
- Operating Temperature
- 40℃~+175℃
- Power Dissipation(Pd)
- 136W
- Electronic Component
- Electronic Component
- Electronic Component
- 450
- Voltage(Vdss)
- 1.2kV
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
GC3M0075120D 产品概述
一、产品概述
GC3M0075120D 为 SUPSiC（国晶微半导体）推出的一款高电压单晶硅碳化硅（SiC）N沟道功率MOSFET，采用 TO-247-3 封装。器件设计以高耐压、低开关损耗与高温稳定性为目标，适用于要求严格的中高压功率变换场景。
二、主要参数
- 类型：N沟道 MOSFET
- 漏源耐压 Vdss：1.2 kV
- 连续漏极电流 Id：32 A
- 耗散功率 Pd：136 W
- 阈值电压 Vgs(th)：2.5 V
- 导通电阻 RDS(on)：75 mΩ @ Vgs=15 V
- 总栅极电荷 Qg：54 nC
- 输入电容 Ciss：1.39 nF
- 输出电容 Coss：58 pF
- 反向传输电容 Crss：2 pF
- 工作温度范围：-40 ℃ ~ +175 ℃
- 封装：TO-247-3
三、关键特性与优势
- 高耐压（1.2 kV）：适合 800 V 以上的直流母线及中高压拓扑。
- 低导通电阻：75 mΩ 在 15 V 门极驱动下提供较低导通损耗，配合合适散热可支持较大持续电流。
- 低寄生电容（Coss/Crss）：58 pF / 2 pF 有利于减少开关损耗与开关应力，提高开关效率。
- 宽工作温度：最高工作温度可达到 175 ℃，增强系统可靠性与热裕度。
- 中等栅极电荷（54 nC）：在兼顾开关速度与驱动能耗之间达到平衡。
四、典型应用
- 光伏逆变器、中高压变流器
- 工业电源与无间断电源（UPS）
- 电动车充电桩、高压电源模块
- 高频高效开关电源与电机驱动系统
五、设计与使用建议
- 驱动：建议采用 ±15 V 级的门极驱动器，确保 Vgs 在额定值下稳定工作。Qg=54 nC 表明需考虑驱动器的峰值电流与功耗。
- 散热：TO-247-3 封装需配合合适散热器或水冷系统，Pd=136 W 为器件热设计上限，应根据实际工况计算结壳温升。
- 布局与抑振：高速切换特性对寄生电感敏感，建议优化布局、使用吸收/缓冲网络以降低过冲与振铃。
- 安全保护：建议配合过流、过温、软关断或能量钳位电路，因器件的能量吸收能力与浪涌承受限于具体应用条件。
六、总结
GC3M0075120D 以其 1.2 kV 的高耐压性能、较低的开关寄生参数和宽温度适应能力，适合用于要求高效率、高可靠性的中高压功率电子系统。在系统设计中需重视门极驱动能力与热管理，以发挥器件的最佳性能与长期可靠性。
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