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SUPSiC GC2M0080120D
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- SUPSi C GC2M0080120D
- Type
- SUPSIC
- Minimum package
- 30 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SUPSIC
- Electronic Component
- GC2M0080120D
- Electronic Component
- 1
- Package
- TO247-3
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 8.49g
- Electronic Component
- 1
- Electronic Component
- BM0227373060
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 192W
- Electronic Component
- Electronic Component
- Electronic Component
- 30
- Voltage(Vdss)
- 1.2kV
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
GC2M0080120D 产品概述
一、产品简介
GC2M0080120D 是 SUPSiC（国晶微半导体）推出的一款高压碳化硅（SiC）功率MOSFET，单通道N沟道设计，封装为工业常用的 TO-247-3。器件面向中高功率、高效率电力电子应用，兼顾快速开关与耐压能力，适用于要求低导通损耗与高温可靠性的场合。
二、主要电气参数
- 漏源耐压 (Vdss)：1.2 kV
- 连续漏极电流 (Id)：36 A
- 最大耗散功率 (Pd)：192 W
- 门阈电压 (Vgs(th))：2.9 V
- 导通电阻 (RDS(on))：80 mΩ @ Vgs = 20 V
- 栅极电荷量 (Qg)：71 nC
- 输入电容 (Ciss)：1.13 nF
- 反向传输电容 (Crss)：7.5 pF
- 输出电容 (Coss)：92 pF
- 工作温度范围：-55 ℃ ~ +150 ℃
- 封装：TO-247-3
三、关键特性与优点
- 高耐压（1.2 kV）：适合中高电压转换和电机驱动以及电力电子前端应用。
- 低导通电阻与高电流能力：80 mΩ @20 V 和 36 A 连续电流，降低导通损耗，提高系统效率。
- 碳化硅材料优势：高击穿场强和高温性能，使器件在高频和高温工况下表现优越。
- 完整寄生电容参数（Ciss/Coss/Crss）和较大Qg值，有助于系统设计时评估开关损耗与驱动需求。
四、设计与驱动建议
- 推荐驱动电压以 20 V 级别为参考（RDS(on)数据在 Vgs=20 V 时标定），驱动器需能提供足够电流以克服 71 nC 的栅极电荷，实现期望的开关速度。
- 由于较大的 Qg 与 Ciss，建议使用低阻抗、高峰值电流能力的栅极驱动器，并在驱动回路中串联适当的栅阻以控制 dV/dt、抑制振荡。
- 开关瞬态能量与 Coss、Crss 相关，设计时应考虑适当的吸收/箝位（RC、RCD、TVS）以保护器件并降低电磁干扰。
五、热管理与可靠性
- TO-247-3 封装便于使用标准散热器或插入式冷却方案，建议在高功率工作点下采用良好接触的散热片与合适的导热界面材料。
- 器件允许工作温度范围广（-55~+150 ℃），但在高温时应进行功率降额并关注焊接、引脚热循环带来的机械应力。
六、典型应用领域
适用于光伏逆变器、工业变频器、牵引与轨道交通电源、不间断电源（UPS）、电动汽车充电桩、高压开关电源（SMPS）以及其他高压中功率的能量变换场景。
总结：GC2M0080120D 以 1.2 kV 的高耐压、良好的导通特性与碳化硅材料的高温、高频优势，为中高压电力电子平台提供了可靠且高效的开关元件选择。设计时应重视栅极驱动、瞬态抑制及热管理，以发挥其最佳性能。
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