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TDK C2012X5R1A336MTJ00E
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
18
specifications
Core information
- Product name
- TDK C2012X5R1A336MTJ00E
- Type
- TDK
- Minimum package
- 2000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TDK
- Electronic Component
- C2012X5R1A336MTJ00E
- Electronic Component
- 1
- Electronic Component
- 33uF
- Package
- 0805
- Electronic Component
- SMD Capacitor(MLCC)
- Electronic Component
- ±20%
- Electronic Component
- 0.042g
- Electronic Component
- 1
- Electronic Component
- BM0228055145
- Electronic Component
- X5R
- Voltage
- 10V
- Electronic Component
- Electronic Component
- Electronic Component
- 2000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
C2012X5R1A336MTJ00E 产品概述
一、主要参数
TDK 型号 C2012X5R1A336MTJ00E，封装 0805（公制 2012），标称电容 33 µF，公差 ±20%（M），额定电压 10 V，介质类别 X5R。该系列为多层陶瓷贴片电容（MLCC），适合高密度表贴电路板应用。
二、特性与优点
- X5R 介质在 −55°C 至 +85°C 工作温区内允许容值变化范围较小，适合常温与中等温度波动环境使用。
- 0805 封装在占板面积与电容量之间取得平衡，能在有限空间内提供较大容值。
- 陶瓷结构具有低等效串联电阻（ESR）与高频特性优良，适合去耦、旁路与 EMI 滤波。
- 表面贴装工艺成熟，兼容常见回流焊工艺，制造可靠性高。
三、典型应用
- 电源去耦与稳压器输入/输出滤波（DC-DC、LDO）
- 数字/模拟电路的高频旁路与瞬态电流供给
- 移动设备、消费类电子、工业控制板和通信设备中的去耦或储能补偿
四、设计与选型要点
- 注意直流偏压效应：陶瓷电容在加直流电压时容值会下降，尤其是大电容量小封装器件，建议根据工作电压下的实际有效容值进行容量裕量设计。
- 温度特性：X5R 在高低温下容值有一定变化，应核对在目标工作温度下的容差是否满足需求。
- 若需低频大容量或长时间储能，应考虑与电解电容或固态电容混用以补偿陶瓷电容在低频段的不足。
五、焊接与可靠性注意
- 遵循器件制造商的回流焊温度曲线与湿度防护说明，避免长时间高温或潮湿环境存放后直接焊接。
- 裸片陶瓷对机械应力敏感，PCB 布局时尽量减少板弯曲与紧邻螺丝孔的应力源，放置时提供适当焊盘设计与阻焊保护。
- 大批量使用前建议进行实际电气与温度应力验证（如振动、温循环与偏压寿命测试）。
六、替代与扩展建议
- 若对容差或温度稳定性要求更高，可考虑 X7R 或 NP0/C0G 系列（但同等体积下容值通常较低）。
- 需要更高工作电压或更稳定的容量随偏压变化时，可选更大封装或并联多只电容以获得所需特性。
结语：C2012X5R1A336MTJ00E 为在 0805 尺寸中提供较大容量的成熟 MLCC 选型，适合多数去耦与滤波场合。具体的电气性能（偏压下容值、ESR、纹波电流、寿命测试数据等）请以 TDK 正式数据手册为准，并在关键设计中做实测验证。
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