WMSIC Electronic Components

TDK MPZ1005S331ET000

ModelMPZ1005S331ET000
Package0402
BrandTDK
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
TDK MPZ1005S331ET000
Type
TDK
Unit
Electronic Component
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
TDK
Electronic Component
MPZ1005S331ET000
Electronic Component
1
Package
0402
Electronic Component
Ferrite Bead
Electronic Component
±25%
Electronic Component
0.012g
Electronic Component
1
Channel Count
1
Electronic Component
BM0258764234
Operating Temperature
55℃~+125℃
Current
700mA
@Frequency
330Ω@100MHz
Resistor(DCR)
280mΩ

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MPZ1005S331ET000 产品概述

一、产品简介

TDK 型号 MPZ1005S331ET000 为 0402(1005 公制)封装的单通道磁珠器件,设计用于高频电磁干扰(EMI)抑制和信号/电源线噪声整治。器件在 100 MHz 处标称阻抗为 330 Ω,偏差为 ±25%,适合超小型器件与空间受限的 PCB 布局中使用。

二、主要电气参数

  • 阻抗:330 Ω @ 100 MHz(典型值,偏差 ±25%)
  • 直流电阻(DCR):280 mΩ(典型)
  • 额定电流:700 mA(连续)
  • 通道数:1(单端)
  • 工作温度范围:-55 ℃ ~ +125 ℃
  • 封装:0402(1005 公制)
    这些参数意味着该磁珠在射频带宽具有较高阻抗,同时对直流电流造成较小的压降。

三、性能特点

  • 高频抑制能力强:在 VHF/UHF 范围内提供显著阻抗,用于衰减高频噪声。
  • 低 DCR:280 mΩ 的直流电阻可在中高电流应用中降低功率损耗与压降。按最大额定电流 700 mA 计算,压降约为 0.196 V,耗散功率约为 0.137 W(P = I^2·R),需考虑实际发热与系统散热能力。
  • 宽温度稳定性:-55 ℃ 至 +125 ℃ 的工作范围,适应工业级温度要求。
  • 微型封装:0402 尺寸便于高密度布板和移动设备、小型模块等应用。

四、典型应用

  • 手机、便携式终端与无线路由器的电源噪声抑制
  • 基带、射频前端与高速接口的局部 EMC 处理
  • 工业控制与嵌入式模块的信号线去耦与干扰滤除
  • 电源开关节点、LDO 输入/输出滤波

五、布局与使用建议

  • 串联放置:将磁珠串联于待抑制的电源或信号线上,靠近噪声源或 IC 电源引脚放置以提高抑制效果。
  • 尽量缩短封装两端的走线,避免形成寄生回路,必要时在接地侧布置充足的旁路电容以处理低频噪声。
  • 热与压降评估:在接近额定电流工作时评估压降和器件温升,若连续大电流工作建议验证实际温升并预留余量。
  • 焊接兼容性:适用于常规回流焊工艺,建议参考 TDK 的焊接与回流曲线以保证可靠性。

六、选型与替代建议

  • 若需更低压降或更高电流能力,可考虑尺寸更大或 DCR 更低的磁珠/滤波器。
  • 对于要求更精确阻抗的应用,可选择阻抗公差更小或提供频谱曲线(Z–f)的型号以便仿真与验证。
  • 若要实现共模抑制,应选用双通道共模磁珠或共模扼流器。

总结:MPZ1005S331ET000 在超小封装下提供了在 100 MHz 附近优秀的阻抗特性,适合对 PCB 空间和高频 EMI 抑制有要求的便携与工业产品。选型时请综合考虑电流、压降、温升与 PCB 布局以确保稳定可靠的系统性能。

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