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TDK C1005X5R1E225KT000E
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
18
specifications
Core information
- Product name
- TDK C1005X5R1E225KT000E
- Type
- TDK
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TDK
- Electronic Component
- C1005X5R1E225KT000E
- Electronic Component
- 1
- Electronic Component
- 2.2uF
- Package
- 0402
- Electronic Component
- SMD Capacitor(MLCC)
- Electronic Component
- ±10%
- Electronic Component
- 0.012g
- Electronic Component
- 1
- Electronic Component
- BM0231096234
- Electronic Component
- X5R
- Voltage
- 25V
- Electronic Component
- Electronic Component
- Electronic Component
- 10000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
TDK C1005X5R1E225KT000E 产品概述
一、产品简介
TDK 型号 C1005X5R1E225KT000E 为贴片多层陶瓷电容（MLCC），规格为 2.2µF ±10% / 25V，介质为 X5R，封装为 0402（公制 1005，约 1.0 × 0.5 mm）。该型号在体积极小的前提下提供较高的电容值，适合对板面空间敏感但需要中等到较大旁路/去耦电容的便携电子设备与消费类产品。
二、主要特性
- 容值：2.2µF，标称精度 ±10%（K）。
- 额定电压：25V，适用一般的电源与信号去耦场合。
- 介质：X5R，温度范围与容值稳定性较为平衡，适用于中温域（典型工作温度 -55°C 至 +85°C，容值变化约为 ±15% 量级）。
- 封装：0402，适合高密度安装与移动设备轻薄化设计。
- MLCC 的固有优点：低等效串联电阻（ESR）、低等效串联电感（ESL）、长期可靠性高。
三、电气性能与使用注意
- DC 偏压影响：高介电常数陶瓷在直流偏压下会出现显著的容值下降，2.2µF/0402 尺寸在接近额定电压时容值可能减少，设计时应考虑适当的去耦裕量或降额使用。
- 温度特性：X5R 在温度变化时有一定容值漂移，需确认在实际工作温度范围内的容值是否满足电路要求。
- 漏电与寿命：MLCC 漏电电流较低但非零，长期性能稳定；极端机械应力（如板弯曲）可能引发破裂或性能退化。
四、典型应用
- MCU/CPU、FPGA 等数字芯片的旁路与局部去耦。
- 电源模块与 DC/DC 的输入/输出旁路及噪声滤除。
- 移动设备、可穿戴、仪器仪表、通信设备等对体积和性能有双重要求的场景。
五、封装与装配建议
- 推荐按照 TDK / JEDEC 的 0402 推荐焊盘尺寸布局，保证焊点可靠性并减少焊接应力集中。
- 支持无铅回流焊工艺，遵循器件的回流温度曲线和峰值温度限制以避免热损伤。
- 装配后避免过度弯曲或局部受力；在高应力区域建议增加保护或考虑更大封装。
六、可靠性与环境适配
X5R 型 MLCC 在正常使用条件下具有良好的失效率与长期稳定性。对湿度、温度循环与振动均有较强耐受性，但应避免与强酸、强碱或腐蚀性气体长期接触；建议在苛刻环境下做可靠性评估。
七、选型与替代建议
若需更小的容值漂移或更高温度稳定性，可考虑 X7R 或 NP0（C0G）等介质；若担心 DC 偏压导致的容值损失，可选择更大封装（如 0603、0805）或并联多个电容以降低偏压影响。
八、结论
TDK C1005X5R1E225KT000E 是一款在 0402 极小封装中提供 2.2µF/25V 能力的高密度 MLCC，适合对空间、成本和电气性能有综合要求的去耦与滤波应用。设计时需关注 DC 偏压与温度对容值的影响，合理降额与布局可确保最佳的电路性能和可靠性。
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