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TDK MPZ1005S221ETD25
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- TDK MPZ1005S221ETD25
- Type
- TDK
- Unit
- Electronic Component
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- TDK
- Electronic Component
- MPZ1005S221ETD25
- Electronic Component
- 1
- Package
- 0402
- Electronic Component
- Ferrite Bead
- Electronic Component
- ±25%
- Electronic Component
- 0.012g
- Electronic Component
- 1
- Channel Count
- 1
- Electronic Component
- BM0254006315
- Operating Temperature
- 55℃~+125℃
- Current
- 900mA
- @Frequency
- 220Ω@100MHz
- Resistor(DCR)
- 220mΩ
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MPZ1005S221ETD25 产品概述
一、产品简介
MPZ1005S221ETD25 是 TDK 出品的一款0402尺寸（公称1.0×0.5 mm）磁珠，用于高频干扰抑制与电源/信号线去耦。该器件在100 MHz 时阻抗为 220 Ω，直流电阻（DCR）约 220 mΩ，额定直流电流 900 mA，工作温度范围 -55℃ 到 +125℃。单通道元件，适合空间受限且对高频抑制有较高要求的表面贴装设计。
二、主要特性
- 高频阻抗：220 Ω @ 100 MHz（标称值，误差 ±25%）
- 直流电阻（DCR）：约 220 mΩ（典型）
- 额定电流：900 mA（连续电流能力，需考虑温升与工况）
- 单通道结构，适用于单线抑制
- 工作温度：-55℃ ～ +125℃
- 封装：0402（适合高密度 PCB）
三、电气与性能要点
该磁珠在100 MHz 附近表现出较高的阻抗，能有效衰减射频干扰。DCR 较低，有利于减小导通损耗与压降。需要注意：
- 标称阻抗存在 ±25% 公差，设计时留有裕量。
- 高频阻抗受直流偏置和安装环境影响，实际阻抗可能随电流和温度变化。
- 用于电源线时应关注压降与发热，在接近额定电流工作需评估温升。
四、典型应用场景
- 手机、平板、可穿戴设备的电源与地线 EMI 抑制
- 模块化电源滤波、开关电源输出滤波
- 接口与高速信号线的共模/差模噪声抑制（单端噪声场合）
- 工业与汽车电子中对射频干扰的局部滤除（在规定温度范围内）
五、设计与焊接注意事项
- 推荐将磁珠靠近噪声源或受扰器件放置，以提高抑制效果。
- 与旁路电容配合使用可形成更好的低通/吸收特性：磁珠串联，旁路电容并联到地。
- 0402 封装对焊接工艺敏感，遵循厂商推荐的回流曲线与焊盘设计，避免过度机械应力。
- 在高电流或高温环境下应进行实际工况验证（压降、温升和阻抗变化）。
六、可靠性与选型建议
- 在选型时参考完整数据手册，确认阻抗-频率曲线、耐温性能及包装信息。
- 若电流裕量不足，可考虑更大封装或额定电流更高的型号。
- 对关键产品建议做温度循环、湿热与焊接可靠性评估，确保满足应用寿命要求。
七、订购与资料
型号为 MPZ1005S221ETD25，品牌 TDK。具体包装、库存与规范参数请参考 TDK 官方数据手册或向授权分销商索取样片与技术支持。若需等效替代件或进一步的阻抗曲线与热特性数据，可提供电路工作条件以便进一步推荐。
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