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TDK C1005C0G1H101JT000F
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
16
specifications
Core information
- Product name
- TDK C1005C0G1H101JT000F
- Type
- 0402
- Minimum package
- 10000
Technical parameters
- Electronic Component
- TDK
- Electronic Component
- C1005C0G1H101JT000F
- Electronic Component
- 1
- Electronic Component
- 100pF
- Package
- 0402
- Electronic Component
- SMD Capacitor(MLCC)
- Electronic Component
- ±5%
- Electronic Component
- 0.012g
- Electronic Component
- 1
- Electronic Component
- BM0257285766
- Electronic Component
- C0G
- Voltage
- 50V
- Electronic Component
- 10000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
C1005C0G1H101JT000F 产品概述
一、主要参数与标识
TDK 型号 C1005C0G1H101JT000F 为贴片多层陶瓷电容（MLCC），规格为 0402（公称尺寸 1.0×0.5mm），容量 100pF，公差 ±5%（J），额定电压 50V，介质类型为 C0G（亦称 NP0）。该系列属于温度特性稳定的一级介质，满足高精度和高稳定性电路的需求。器件符合无铅与 RoHS 要求，适用于常温回流焊工艺。
二、核心性能与特性
C0G 介质具有极低的温度系数（典型 0±30 ppm/°C），在 -55°C 到 +125°C 范围内容量变化极小，电压系数也可忽略，老化率接近零，介电损耗低，等效串联电阻（ESR）和等效串联电感（ESL）均较小，适合高频和射频场合使用。0402 小封装在提供较好寄生参数的同时，具有很高的安装密度，但单颗能量承载与电压冲击能力有限，应注意实际工况下的电压和机械应力。
三、典型应用场景
- 高频滤波与阻容网络：射频前端、滤波器、阻抗匹配电路。
- 精密计时与振荡：晶振负载、相位噪声敏感电路。
- 模拟前端与采样电路：电荷放大器、采样保持、传感器接口。
- 去耦与旁路：对高频噪声的抑制效果显著，适合要求稳定电容值的去耦位置。
四、封装与装配注意事项
0402 极小封装易发生“立碑”或焊接不良，建议采用对称焊盘设计、控制焊膏用量与回流曲线、使用精确的贴装设备。回流峰值温度按器件与工艺规范（一般 ≤260°C）控制。PCB 布局上，去耦电容应尽量靠近被去耦芯片的电源引脚并短路回地，必要时增加过孔以降低回路阻抗。避免在 PCB 焊接后板弯或机械应力集中处贴装，以防开裂。
五、选型与替代建议
如需更高容量或更小尺寸可考虑 X7R/Y5V 等介质，但会牺牲温度与电压稳定性。若要求更低损耗或高频性能，可在 0201/0402 中选择同系列 C0G/NP0 产品。选型时重点核对频率范围、温度范围、额定电压与焊接工艺相容性，确保满足电气与可靠性要求。若需样品或批量资料，可参考 TDK 官方数据手册以获取完整的性能曲线与封装信息。
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