Model & package intelligence
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TDK CGA2B1X7R1E473KT0Y0F
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
18
specifications
Core information
- Product name
- TDK CGA2B1X7R1E473KT0Y0F
- Type
- TDK
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TDK
- Electronic Component
- CGA2B1X7R1E473KT0Y0F
- Electronic Component
- 1
- Electronic Component
- 47nF
- Package
- 0402
- Electronic Component
- SMD Capacitor(MLCC)
- Electronic Component
- ±10%
- Electronic Component
- 0.012g
- Electronic Component
- 1
- Electronic Component
- BM0257285448
- Electronic Component
- X7R
- Voltage
- 25V
- Electronic Component
- Electronic Component
- Electronic Component
- 10000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
TDK CGA2B1X7R1E473KT0Y0F 产品概述
一、产品简介
TDK 型号 CGA2B1X7R1E473KT0Y0F 为贴片多层陶瓷电容（MLCC），规格为 47nF（0.047µF）、公差 ±10%、额定电压 25V、温度特性 X7R，封装 0402。该器件面向高密度 SMT 设计，体积小、寄生参数低，适用于去耦、滤波、旁路及一般模拟电路应用。
二、关键电气与材料特性
- 电容值：47nF（标称）
- 公差：±10%（K）
- 额定电压：25V DC
- 温度特性：X7R（–55°C 至 +125°C 范围内允许电容变化在 ±15% 以内）
- 封装：0402（适合高密度板级布局） X7R 材料在温度稳定性与介电常数之间取得折衷，容量密度中等，适用于大多数去耦和滤波场合。
三、典型应用场景
- 数字电源及芯片电源旁路/去耦
- 高频滤波与噪声抑制
- 模拟电路的耦合/退耦元件
- 便携设备、通信模块与消费电子中小容量阵列补充电容
四、设计与使用建议
- 考虑 DC 偏置效应：陶瓷电容在直流偏置下实际有效电容会降低，尤其是高介电常数材料。设计中应预留裕量或选更大标称值以满足实际需求。
- 温度与老化：X7R 的温度稳定性优于Y5V，但仍有轻微随时间老化与温漂，关键节点建议进行实际测试验证。
- PCB 布局：去耦电容尽量靠近供电引脚并缩短走线，减小串联电感；0402 适合放置于狭小空间，但焊接与回流工艺需严格控制。
五、装配与可靠性提示
- 推荐按照 TDK/焊锡材料规范采用合适的回流曲线，避免过高峰值温度和过长保温时间。
- 小尺寸封装易受机械应力影响，贴装与波峰/回流后避免强弯曲或刻意挤压。
- 储存与贴装前注意防潮与静电防护，遵循供应商的包装与储存建议。
六、选型参考与替代方案
在需要更高容量稳定性或更低偏置效应时，可考虑 C0G/NP0 型陶瓷或薄膜电容作为替代；若体积允许，选择更大封装可获得更高实际电容值和更好温度/偏置性能。购买时以完整料号（CGA2B1X7R1E473KT0Y0F）为准，确认批次与规格一致。
总结：CGA2B1X7R1E473KT0Y0F 为适用于常规去耦与滤波的 0402 MLCC，兼具小体积与良好温度特性，在移动设备与高密度 PCB 设计中具有较高的实用价值。
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