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TDK CGA3E1X7S1C225KT000N
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
16
specifications
Core information
- Product name
- TDK CGA3E1X7S1C225KT000N
- Type
- TDK
- Minimum package
- 4000
Technical parameters
- Electronic Component
- TDK
- Electronic Component
- CGA3E1X7S1C225KT000N
- Electronic Component
- 1
- Electronic Component
- 2.2uF
- Package
- 0603
- Electronic Component
- SMD Capacitor(MLCC)
- Electronic Component
- ±10%
- Electronic Component
- 0.033g
- Electronic Component
- 1
- Electronic Component
- BM0230029510
- Electronic Component
- X7S
- Voltage
- 16V
- Electronic Component
- 4000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
TDK CGA3E1X7S1C225KT000N 产品概述
一、产品概述
TDK 型号 CGA3E1X7S1C225KT000N 为贴片多层陶瓷电容（MLCC），规格为 2.2 µF，容差 ±10%，额定电压 16 V，温度特性 X7S，封装 0603（1608 公制）。该器件体积小、容值密度高，适合用作电源去耦、旁路与一般滤波用途。
二、主要性能与参数
- 容值：2.2 µF ±10%
- 额定电压：16 V DC
- 温度特性：X7S（工作温度范围 -55°C 至 +125°C，温度带来电容量变化通常在 ±15% 范围内，按相关标准定义）
- 封装：0603（1.6 mm × 0.8 mm）
- 介质特性：Class II 陶瓷（高介电常数），体积小但对直流偏压及温度较敏感
- 典型特性：低 ESR/低 ESL，适合高频旁路；在直流偏压下存在显著的电容量下降（DC bias effect）
三、典型应用场景
- MCU、FPGA 等器件的电源旁路与去耦
- 手机、可穿戴、物联网模块等空间受限的便携设备
- 开关电源输入/输出滤波与储能补偿（注意容量随偏压下降）
- 通用模拟/数字电路中的去耦与噪声抑制
四、PCB 布局与焊接建议
- 去耦电容应尽量靠近电源引脚放置，焊盘与走线要尽量短且粗以降低寄生阻抗。
- 焊盘设计应对称、焊锡量均匀以降低“立碑”现象（tombstoning）概率。
- 遵循厂家推荐的回流焊温度曲线（无铅回流峰值温度与时间按 IPC/JEDEC 规范），避免重复高温循环。
- 封装较小且陶瓷脆，焊接与后续波峰/回流过程中避免过度机械应力。
五、可靠性与使用注意
- X7S 属 Class II，虽然体积小容量高，但在高 DC 偏压下电容量会显著减小；在关键电源滤波或定容场合建议做电压降额（常用 50%–80% 额定电压降额原则，视电路容忍度而定），或选择更高电压等级器件以保证实际容量。
- MLCC 机械脆弱，PCB 机械应力、焊锡冷却不均或装配挤压可能导致裂纹，影响长期可靠性。
- 该型号适合一般去耦与滤波，不适合作为高精度计时或对温漂要求极高的场合。
六、替代与采购建议
若需更低 DC bias 效应可考虑增大封装或提高额定电压的同类 X7S 或采用更稳定的介质（如 X5R/NP0 在不同性能权衡下选择）。市场上 Murata、Samsung、Kyocera 等厂商有同类 0603 2.2 µF /16 V X7S 产品，选型时注意封装、电压与温特性一致。采购时确认贴片包装（卷带）、批次和保存条件，严格按制造商推荐的储存与回流规范操作。
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