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T2N7002AK,LM(B T2N7002AK
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- TOSHIBA T2N7002AK, LM(B
- Type
- TOSHIBA
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TOSHIBA
- Electronic Component
- T2N7002AK,LM(B
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.031g
- Electronic Component
- 1
- Electronic Component
- BM0229254862
- Power Dissipation(Pd)
- 320mW
- Gate Voltage(Vgs)
- ±20V
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
T2N7002AK,LM(B) 产品概述
一、概述与定位
T2N7002AK,LM(B) 是东芝（TOSHIBA）推出的一款单管N沟道增强型MOSFET，封装为SOT-23，适合小信号开关与低功耗场合。器件额定漏源电压Vdss为60V，连续漏极电流Id为200mA，整体设计面向便携电子、信号切换和低电流功率控制等应用。
二、主要电气参数（关键数值）
- 类型：N沟道 MOSFET（单管）
- 封装：SOT-23
- 漏源电压 Vdss：60V
- 连续漏极电流 Id：200mA
- 导通电阻 RDS(on)：2.8Ω @ Vgs = 10V
- 功耗 Pd：320mW（封装热限制）
- 阈值电压 Vgs(th)：约 2.1V（典型）
- 栅极电荷 Qg：270pC
- 输入电容 Ciss：11pF；反向传输电容 Crss：700fF；输出电容 Coss：3pF
- 栅极电压最大值 Vgs：±20V
三、性能与驱动建议
器件在Vgs=10V时RDS(on)为2.8Ω，说明在高电平栅驱下可工作良好；但阈值电压约2.1V，低电平逻辑驱动（如3.3V）下导通阻抗会显著上升，因此需要根据负载电流评估压降和发热。栅极电荷和输入电容较小，切换时门极负担小，适合中低速开关；Crss和Coss较小，有利于减少开关损耗和米勒效应，但在高频或高电压跨越时仍需注意栅极驱动过渡。
四、热管理与可靠性
SOT-23封装Pd仅320mW，实际功耗受PCB散热影响明显。工作时应确保低功耗设计或采用合适的散热良好PCB布局（扩大铜箔、靠近地平面）。连续工作电流200mA为参考上限，长期接近额定值会导致封装温度升高并降低可靠性。注意器件为静电敏感元件，装配与调试时采取防静电措施。
五、典型应用场景
适用于小电流开关、信号译码、负载断开、模拟开关、过流保护前级、驱动小继电器/LED阵列、便携仪表和电池供电设备中的低功率开关。也常用于电平转换和逻辑隔离场合，但在需要低导通压降的功率路径或高频高电流应用上并不适合。
六、使用注意事项
- 栅极最大耐压为±20V，避免超压或反向瞬变。
- 在3.3V逻辑体系下验证RDS(on)和温升是否满足系统要求，必要时使用前级驱动提升Vgs。
- 布局时尽量缩短栅极回路，增加旁路电容以抑制瞬态干扰。
- 封装散热能力有限，若需要更高电流或更低压降，应选用低RDS(on)和更大封装的器件。
总体来看，T2N7002AK,LM(B) 是一款面向小信号、低功耗场合的通用N沟MOSFET，具有60V耐压和便捷的SOT-23封装，适用于众多电子产品中的开关与控制应用。
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