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TECH PUBLIC DMG1012T
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- TECH PUBLIC DMG1012T
- Type
- TECH PUBLIC
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TECH PUBLIC
- Electronic Component
- DMG1012T
- Electronic Component
- 1
- Package
- SOT-523-3
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.033g
- Electronic Component
- 1
- Electronic Component
- BM0226539277
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 280mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
DMG1012T 产品概述
一、产品简介
DMG1012T 是 TECH PUBLIC（台舟电子）推出的一款小封装 N 沟道增强型场效应管（MOSFET），适用于空间受限、低压小电流的开关和功率管理场合。器件耐温范围宽（-55℃～+150℃），在 2.5V 门极驱动下仍能提供较小的导通电阻，适合便携式设备与低压电源前端应用。
二、主要参数
- 类型：N 沟道 MOSFET
- 漏源电压 Vdss：20 V
- 连续漏极电流 Id：800 mA
- 导通电阻 RDS(on)：300 mΩ @ Vgs=2.5 V
- 阈值电压 Vgs(th)：1.1 V @ Id=250 μA
- 耗散功率 Pd：280 mW
- 输入电容 Ciss：120 pF
- 输出电容 Coss：20 pF
- 反向传输电容 Crss：15 pF
- 封装：SOT-523-3（超小型）
- 工作温度：-55℃～+150℃
- 数量：1 个 N 沟道
三、关键特性
- 低电压驱动：Vgs(th)≈1.1V，在 2.5V 门驱下导通电阻为 300 mΩ，适合低电压逻辑电平驱动。
- 小体积封装：SOT-523-3，节省 PCB 面积，适合移动设备与高密度布局。
- 低输入/输出电容：Ciss 和 Coss 较小，有利于减小驱动能耗与提高开关速度。
- 宽温度范围与稳健可靠性，适合工业级环境。
四、典型应用
- 便携式电源开关与负载切换（智能手机配件、蓝牙耳机等）
- 电源管理 IC 外围开关、反向保护开关
- 低压小电流驱动场景（信号开关、驱动小型继电器）
- 电池供电系统与充放电路径控制
五、使用建议与注意事项
- 功率与电流限制：在最大 Id（800 mA）下器件功耗接近限值（I^2·R ≈0.19 W），建议在实际设计中考虑 PCB 铜箔散热与环境温度的降额使用。
- 开关速度与振铃控制：门极电阻与寄生电容（Ciss、Crss）影响开关过渡及电磁兼容，必要时在门极串联阻尼。
- 过压与瞬态保护：20 V 耐压限制在汽车或工业高瞬态场景需外加 TVS 或限压措施。
- 布局建议：尽量缩短漏源回流路径，增大散热铜箔面积，保证热阻最低。
- ESD、防反接保护：SOT-523-3 封装体积小，易受静电影响，建议在生产与上板阶段做好防静电与保护设计。
六、封装与订购信息
- 品牌：TECH PUBLIC（台舟电子）
- 封装：SOT-523-3（3 引脚）
- 型号：DMG1012T
如需样片或批量采购，请提供工作环境说明与应用场景，以便选型与可靠性评估。
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