WMSIC Electronic Components

TECH PUBLIC WNM2016A

ModelWNM2016A
PackageSOT-23
BrandTECH PUBLIC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TECH PUBLIC WNM2016A
Type
TECH PUBLIC
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
TECH PUBLIC
Electronic Component
WNM2016A
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.029g
Electronic Component
1
Electronic Component
BM0227776284
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1.25W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V
Capacitor(Ciss)
574pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

WNM2016A 产品概述

一、产品简介

WNM2016A 是 TECH PUBLIC(台舟电子)推出的一款小封装 N 沟道场效应晶体管(N‑MOSFET),封装为 SOT‑23,适用于 20V 以下的低压开关与电源管理场合。该器件在 VGS=4.5V 条件下具有较低的导通电阻,适合电池供电与便携设备中作为低侧开关、负载开关或同步整流周边器件使用。

主要基础参数(典型/额定值):

  • 漏源电压 Vdss:20V
  • 连续漏极电流 Id:6A
  • 导通电阻 RDS(on):35 mΩ @ VGS=4.5V, Id=6A
  • 功耗 Pd:1.25W
  • 阈值电压 VGS(th):1V
  • 总栅极电荷 Qg:7.7 nC @ VGS=4.5V
  • 输入电容 Ciss:574 pF @ 10V
  • 反向传输电容 Crss:60 pF
  • 输出电容 Coss:70 pF
  • 工作温度范围:-55 ℃ ~ +150 ℃
  • 封装:SOT‑23

二、主要特点

  • 低导通电阻:35 mΩ(4.5V 驱动),在低压大电流路径上能显著降低导通损耗与压降。
  • 小体积封装:SOT‑23,适合空间受限的便携与手持设备。
  • 中等栅极电荷:Qg=7.7 nC,有利于在常见 MCU/驱动器电平下实现较快开关,同时驱动功耗可控。
  • 宽温度范围:-55 ℃ 至 +150 ℃,适用于工业级温度环境。

三、电气与热参数解析

  • 导通损耗示例:在额定条件 Id=6A、RDS(on)=35 mΩ 时,电压降 VDS ≈ 6A × 0.035 Ω = 0.21V;导通功耗 P = I^2·R ≈ 6^2 × 0.035 = 1.26W。注意该导通功耗略高于器件标称耗散功率 1.25W,意味着在未采取良好散热措施的情况下,长时间 6A 连续通过会触及热极限或需降额运行。
  • 栅极驱动能量:以 Qg=7.7 nC、VGS=4.5V 估算,单次开关的栅极能量约 E ≈ 0.5·Qg·VGS ≈ 17.3 nJ;若开关频率为 100 kHz,则栅极驱动功率约 1.73 mW,栅极驱动损耗在多数系统中并不显著,但在更高频率下应考虑驱动器能力与开关损耗。
  • 开关特性相关电容:Ciss=574 pF、Crss=60 pF、Coss=70 pF,属于中等水平,开关时的过渡损耗与寄生耦合需通过合理栅阻与缓冲策略控制。

四、典型应用场景

  • 便携设备电源管理:作为负载开关、通断电路、外设电源控制。
  • 低压 DC‑DC 转换器:低侧开关或同步整流(需注意开关损耗与热管理)。
  • 电池保护与电源路径管理:反向阻断、自动开关。
  • 小功率马达驱动、电机控制与 LED 驱动(需确认连续电流与散热能力)。

五、PCB 布局与热管理建议

  • SOT‑23 为小型封装,热阻相对较大。若需接近或达到额定 6A,应增大铜箔面积并在封装下方扰铜或接地平面以改善散热。
  • 将漏极铜箔与散热层尽量增大,使用多层板下联铜平面以降低结-环境热阻。
  • 在空间允许条件下,考虑使用散热片或改用更大封装(如 SO‑8、DFN)以获得更好的持续传导能力。
  • 在设计时为安全起见对 Pd 做温度降额:高环境温度时降低允许连续电流。

六、驱动与开关性能注意事项

  • 建议以 4.5V 门驱动可获得标称 RDS(on)。若使用 2.5V 或更低电平驱动,应验证 RDS(on) 在该 VGS 下的变化(数据表通常给出 4.5V/10V 下的 RDS(on))。
  • 为抑制振铃与限制 dv/dt,可在门极串联 10~100 Ω 的栅极电阻,根据系统开关速度与 EMI 要求调整。
  • 对于高频开关,应关注 Crss 导致的栅-漏耦合(米勒效应),必要时增加栅极驱动能力或采用缓冲驱动。
  • 体二极管存在于 N‑MOSFET 内部,适用于续流路径,但二极管导通时的能量与热耗需在设计中考虑。

七、选型与使用建议

  • 若系统需要长期稳定的 6A 连续电流,应谨慎评估实际 PCB 散热条件;在通用 PCB 上,建议将工作电流额定在安全边际内(例如低于 6A 或采用脉冲工作模式)。
  • 对于高频开关或高能量应用,优先评估开关损耗、Crss 带来的影响,必要时选择更低 Qg 或更低 Ciss 的器件以降低开关损耗。
  • 若仅为低频或静态开关(例如负载开关),WNM2016A 在体积与 RDS(on) 权衡上具有较好性价比。

八、封装与环境可靠性

  • 封装:SOT‑23(便于自动贴片与小型化设计)。
  • 环境工作温度:-55 ℃ ~ +150 ℃,满足一般工业等级温度要求,但高温下器件热耗需降额使用。

结论:WNM2016A 以其 20V 额定电压、在 4.5V 驱动下 35 mΩ 的低导通电阻和小型 SOT‑23 封装,适合便携设备与低压电源管理用途。设计时应重点关注散热与开关损耗,在连续大电流场合做好 PCB 散热或考虑更大封装以保证可靠性。

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