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TECH PUBLIC BSS138LT1G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- TECH PUBLIC BSS138LT1G
- Type
- TECH PUBLIC
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TECH PUBLIC
- Electronic Component
- BSS138LT1G
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.031g
- Electronic Component
- 1
- Electronic Component
- BM0264777485
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 350mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 50V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BSS138LT1G 产品概述
一、产品简介
BSS138LT1G 是台舟电子（TECH PUBLIC）推出的一款小功率 N 沟增强型场效应晶体管（MOSFET），采用 SOT-23 封装。器件耐压 50V，面向信号切换、低电流开关及电平转换等空间受限的应用场景，兼顾低栅极驱动需求与小尺寸布局。
二、主要参数
- 类型：N 沟道 MOSFET
- 最大漏源电压 Vdss：50V
- 连续漏极电流 Id：360mA
- 导通电阻 RDS(on)：4.5Ω @ Vgs=2.5V
- 阈值电压 Vgs(th)：典型 1.5V
- 总栅极电荷 Qg：4nC @ 10V
- 输入电容 Ciss：32pF；反向传输电容 Crss：3pF；输出电容 Coss：6pF
- 最大耗散功率 Pd：350mW
- 工作温度范围：-55℃ 至 +150℃
- 封装：SOT-23
三、特点与优势
- 逻辑电平友好：典型阈值约 1.5V，低电压驱动下能导通，适配 MCU、FPGA 等控制端口。
- 栅极电荷与寄生电容小：Qg=4nC、Ciss=32pF 等指标有利于快速开关与低驱动能耗，适合频繁切换场合。
- 小体积封装：SOT-23 便于密集布局与便携设备应用。
- 可靠的耐压与宽温域：50V 耐压与 -55~+150℃ 工作温度，适应多种工况。
四、适用场景
适合低电流、低功耗应用，例如：
- 电平转换与信号开关
- 小型负载开关（指示灯、传感器供电等）
- 便携式与电池供电系统中的功率路径管理
- EMI/ESD 保护与缓冲电路
五、热管理与限制
器件 Pd=350mW，SOT-23 封装热阻较大，不宜长时间通过接近额定电流的负载。设计时应通过合理的 PCB 铜箔散热、缩短导线与降低占空比等方式控制结温，避免长期过载。
六、选型与使用建议
- 若工作电流超过几十毫安或需更低导通损耗，应考虑 RDS(on) 更低的替代款式；本器件更适合信号级与小功率开关。
- 驱动信号建议达到 2.5V 或更高以获得较低 RDS(on)，在 1.8V 或更低电平时注意增加导通电阻影响。
- 开关频率较高时关注总栅极电荷与 Crss 对开关损耗与电磁干扰的影响，必要时加入栅极电阻与能量回收措施。
总体而言，BSS138LT1G 是一款面向紧凑型、低功耗、小电流场合的通用 N 沟道 MOSFET，适合对体积和驱动电压敏感的电子设计。
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