WMSIC Electronic Components

TECH PUBLIC MBR230S1F

ModelMBR230S1F
PackageSOD-123FL
BrandTECH PUBLIC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TECH PUBLIC MBR230S1F
Type
SOD-123FL
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
TECH PUBLIC
Electronic Component
MBR230S1F
Electronic Component
1
Package
SOD-123FL
Electronic Component
Schottky Diode
Electronic Component
0.042g
Electronic Component
1
Electronic Component
BM0264777501
Current
2A
Diode
1
Current(Ir)
100uA@40V
(Vf)
500mV@2A
Electronic Component
55℃~+150℃
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MBR230S1F 产品概述 — TECH PUBLIC (台舟电子)

MBR230S1F 是一款面向中功率、开关频率较高场合的肖特基整流二极管。该器件在紧凑的 SOD-123FL 表面贴装封装中提供低正向压降与快速响应特性,适用于开关电源、整流及保护电路等对效率和体积有较高要求的应用。

一、主要特性

  • 器件型号:MBR230S1F
  • 品牌:TECH PUBLIC (台舟电子)
  • 封装:SOD-123FL(小型表贴)
  • 额定直流整流电流:2A
  • 正向导通电压 VF:0.50V @ 2A
  • 直流反向耐压 VR:40V
  • 反向电流 IR:100μA @ 40V(典型测试条件)
  • 工作结温范围:-55℃ ~ +150℃
  • 非重复峰值浪涌电流 Ifsm:50A(单次浪涌条件下)

二、性能亮点(为何选用)

  1. 低正向压降:VF=0.5V @ 2A,在中等电流范围内显著降低导通损耗,有利于提升整体系统效率,尤其在低压差大电流的整流场合更为明显。
  2. 快速响应与肖特基特性:肖特基结构本身具备极短的恢复时间,适合高频开关电源和高频整流应用,可减小开关损耗与电磁干扰。
  3. 小型化封装:SOD-123FL 适合高密度 PCB 布局与自动化贴装工艺,有利于紧凑型电源与便携设备设计。
  4. 良好浪涌承受能力:Ifsm=50A,能应对短时启动、电源浪涌等非重复性冲击(需按脉冲波形、持续时间和重复频率评估)。

三、典型应用场景

  • 开关电源(SMPS)中的输出整流与续流二极管
  • 高频降压/升压转换器的输出级整流
  • USB、电源适配器与车载电源中的低压整流
  • 反向极性保护与防反接电路(注意正向压降与功耗)
  • 小型功率模块与便携设备的整流与续流保护

四、设计与使用要点

  • 功率损耗估算:在连续工作中,器件平均功率耗散约为 P ≈ VF × I。以 2A 连续电流为例,P ≈ 0.5V × 2A = 1.0W。系统设计时需考虑 PCB 散热能力和环境温度对结温的影响。
  • 结温与反向泄漏:肖特基二极管的反向电流会随温度上升显著增加。IR=100μA 是在 40V、较低温度下的典型值;在高温工况下应预计更高的逆漏电流并相应做出容忍和散热设计。
  • 浪涌与冲击:Ifsm=50A 表示在规定的脉冲条件下能承受较大浪涌,但不等同于长期重复峰值。避免频繁或长时间的浪涌以免器件退化或损坏。
  • 并联使用注意:若需提高整流电流,总电流可通过并联多个器件实现,但并联时需考虑正向压降匹配、焊盘热阻与均流措施,防止一只器件先热失配而承担过载。
  • PCB 布局建议:增大器件的铜箔散热面积、尽量靠近热源布局,并确保走线短且阻抗合理,以降低导通与开关损耗引起的温升。

五、封装与热管理

SOD-123FL 封装体积小、厚度薄,适合体积受限的电路板设计。尽管尺寸优势明显,但由于封装体积较小,热阻相对较大,连续高功率工作时需借助 PCB 铜箔面积扩展散热路径或在器件底部/附近设计散热区,以保证结温在安全范围内并延长器件寿命。

六、可靠性与选型建议

  • 工作温度范围广(-55℃~+150℃),可覆盖多种工业与商用场景,但为保证长期可靠性建议在常规设计中将结温控制在更保守的上限(例如≤125℃)。
  • 在选择用于汽车或高温环境的设计时,应额外考虑逆向泄漏随温度上升对系统待机功耗和逻辑电平的影响。
  • 若应用场景对正向压降或反向耐压有更严苛要求,可比较其他电流等级或更高耐压(例如 60V/100V)肖特基器件;若需要更低的导通损耗,可考虑功率更大的封装或同步整流方案。

总结:MBR230S1F 提供了低 VF(0.5V@2A)、中等整流能力(2A)与良好浪涌承受能力(50A)相结合的特性,适合用于受限空间内需要高效整流的电源与开关电路。在具体应用中应重视热管理与高温下的逆向泄漏变化,合理布线与散热设计可发挥其最佳性能。

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