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TECH PUBLIC SI2308BDS
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- TECH PUBLIC SI2308BDS
- Type
- TECH PUBLIC
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TECH PUBLIC
- Electronic Component
- SI2308BDS
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.029g
- Electronic Component
- 1
- Electronic Component
- BM0264935508
- Power Dissipation(Pd)
- 350mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
- Capacitor(Ciss)
- 247pF
- Output Capacitor(Coss)
- 34pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SI2308BDS 产品概述
一、产品简介
SI2308BDS 是一款来自 TECH PUBLIC（台舟电子） 的增强型 N 沟道 MOSFET，采用 SOT-23 小封装设计。器件额定漏源电压为 60V，适用于中低功率、高效率电源管理与充电类应用，兼顾低导通损耗与快速开关性能，便于在空间受限的消费电子与便携式设备中实现稳健的功率控制。
二、主要电气参数
- 漏源电压 Vdss：60 V
- 连续漏极电流 Id：3 A
- 导通电阻 RDS(on)：105 mΩ @ Vgs = 10 V
- 最大耗散功率 Pd：350 mW
- 阈值电压 Vgs(th)：2 V（典型）
- 总栅极电荷 Qg：6 nC @ Vgs = 4.5 V
- 输入电容 Ciss：247 pF
- 反向传输电容 Crss：19.5 pF
- 输出电容 Coss：34 pF
- 封装：SOT-23
三、性能特点与优势
- 60V 电压等级满足常见离线/汽车前端及充电设备的耐压需求。
- 105 mΩ 的 RDS(on)（10V 驱动）在中等电流工况下可提供较低的导通损耗，有利于提升系统效率。
- 总栅极电荷较小（6 nC @4.5V），配合较低的输入电容，可实现较快的开关速度并降低驱动能耗，适合高频开关应用。
- SOT-23 小封装便于在空间受限的布局中使用，适合批量化生产与小型功率模块集成。
四、典型应用场景
- 充电器与电源管理模块（开关元件、负载开关）
- DC-DC 降压/升压转换器中作为低端开关或需要外部驱动的高端开关
- 便携设备与消费电子的小功率电源控制
- 逆向电流保护、电池管理与电源选择电路（需考虑驱动与功耗）
五、使用建议与注意事项
- 驱动：为达成标称 RDS(on)，建议采用接近 10 V 的栅极驱动；在 3.3 V 或 5 V 逻辑驱动下需确认实际导通电阻与损耗是否满足设计。
- 热管理：器件 Pd 为 350 mW，SOT-23 封装限制了散热能力，建议使用尽量大的 PCB 铜箔面积导热，必要时采用多层板或热过孔。
- 布局：栅极布线应尽量短以降低寄生电感，漏极铜箔应尽量扩大并靠近器件以利散热；在开关节点并联足够旁路电容以抑制电压尖峰。
- ESD/安全：在装配与调试过程中注意静电保护，避免超过器件最大栅源电压与瞬态浪涌。
六、局限性说明
- 封装与功率限制：SOT-23 的功耗与连续电流能力受限，长时间大电流应用需评估温升并考虑更大封装。
- 逻辑电平驱动：Vgs(th) ≈ 2 V，但该阈值并不等同于完全导通，若仅以 3.3 V 驱动可能无法获得标称 RDS(on)，建议在设计阶段测量实际导通损耗。
总结：SI2308BDS 在 60V 电压等级下以小体积和适中的导通电阻、较低的栅极电荷提供了一个平衡的方案，适合充电设备、电源管理与空间受限的高效率电子系统。设计时应重视驱动电压与散热布线，以充分发挥器件性能。
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