WMSIC Electronic Components

UMW PESD5V2S2UT

ModelPESD5V2S2UT
PackageSOT-23
BrandUMW
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
UMW PESD5V2S2UT
Type
UMW
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
UMW
Electronic Component
PESD5V2S2UT
Electronic Component
1
Package
SOT-23
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.033g
Electronic Component
1
Cj- Capacitor
120pF
Electronic Component
BM0226578709
Voltage
16V
Electronic Component
IEC 61000-4-4;IEC 61000-4-5;IEC 61000-4-2
Current(Ir)
1uA
Voltage(VBR)
8.5V
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

PESD5V2S2UT 产品概述

一、概述

PESD5V2S2UT 是友台半导体(UMW)推出的一款低电容瞬态电压抑制器(TVS/ESD 保护器件),封装为 SOT-23,主要用于对低电压信号线和接口电路的静电放电(ESD)、快速瞬变脉冲(EFT)及浪涌(Surge)进行保护。器件针对 5V 级系统优化,具有低漏电、快速响应和较高的峰值冲击吸收能力,适合移动终端、消费类电子、接口保护及通信设备等对体积和性能有较高要求的场合。

二、主要特性

  • 品牌型号:UMW PESD5V2S2UT
  • 类型:ESD 保护(TVS)
  • 封装:SOT-23,适合表贴安装
  • 钳位电压(Vc):16 V(典型/最大条件标注)
  • 击穿电压(Vbr):8.5 V
  • 反向截止电压(Vrwm,工作电压):5 V(适用于 5 V 级接口)
  • 峰值脉冲功率(Ppp):300 W @ 8/20 μs
  • 峰值脉冲电流(Ipp):20 A @ 8/20 μs
  • 结电容(Cj):120 pF(对高速信号会有一定影响,设计时需注意)
  • 反向电流(Ir):1 μA(典型,利于低功耗/电池供电系统)
  • 符合标准:IEC 61000-4-2(ESD)、IEC 61000-4-4(EFT)、IEC 61000-4-5(浪涌)

三、工作原理与性能亮点

PESD5V2S2UT 作为瞬态抑制器,当线路电压在正常工作范围(≤ Vrwm = 5V)时呈高阻并保持微小漏电流;当出现瞬态过压(静电放电或浪涌)时,器件进入击穿或雪崩导通,迅速将过量能量导向地线并将电压钳制于约 16V,从而保护后级电路元件。器件的快速响应和高峰值吸收能力(300W@8/20μs,Ipp 20A)使其能有效应对常见的工业与消费环境下的冲击事件。

四、典型应用场景

  • USB、HDMI、串口等外部接口的静电与浪涌防护
  • 手机、平板、笔记本等移动设备的输入/输出端口保护
  • 工业控制与通信设备的数据线防护
  • 物联网终端、穿戴设备与消费类电子产品的接口防护

五、设计与布局建议

  • 选型:适用于工作电压不超过 5V 的接口;若用于高速差分线,需评估 120 pF 的结电容对信号完整性的影响。
  • 布局:器件应尽可能靠近被保护的连接器或引脚安装,保护引线尽量短且直接接地以降低寄生感抗。
  • 接地:保证接地平面完整且与系统地良好连接,以提高泄放能力并减少环路噪声。
  • 热管理:在可能频繁承受冲击的环境中,考虑器件的重复承受能力并保证周边有足够散热路径。

六、封装与可靠性

SOT-23 封装利于小型化设计与自动贴装,适合批量生产与 SMT 工艺。器件满足 IEC 61000-4-2/4/5 等常用抗干扰标准认证,适合需要合规性验证的工业与商业应用。

七、注意事项

  • 在高频或高速信号路径上使用时,应验证结电容对信号特性的影响,必要时可选用低电容版本。
  • 若应用存在大能量的持续浪涌或较高重复冲击,应评估器件能否满足长期可靠性或考虑并联/级联保护方案。
  • 最终设计时应参考厂商完整数据手册,包括典型特性曲线、热阻、引脚配置及包装信息,确保满足系统级安全和可靠性要求。

总结:PESD5V2S2UT 以其针对 5V 系统的优化参数、较高的脉冲吸收能力与小巧的 SOT-23 封装,适合对静电与瞬态浪涌有防护需求且对空间与功耗敏感的各类电子设备接口保护。若需完整的电气特性、封装图或样片/订购信息,可进一步提供数据手册或联系供应渠道。

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