WMSIC Electronic Components

UMW PESD5V0S1BA

ModelPESD5V0S1BA
PackageSOD-323
BrandUMW
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
UMW PESD5V0S1BA
Type
UMW
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
UMW
Electronic Component
PESD5V0S1BA
Electronic Component
1
Package
SOD-323
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.031g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
35pF
Electronic Component
BM0226612798
Voltage
14V
Electronic Component
IEC 61000-4-5;IEC 61000-4-2
Current(Ir)
5nA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

PESD5V0S1BA 产品概述

一、产品简介

PESD5V0S1BA 是友台半导体(UMW)推出的一款单路、双向瞬态电压抑制(TVS)二极管,专为保护 5V 等电平的接口和信号线免受静电放电(ESD)及雷电感应浪涌(Surge)损伤而设计。器件采用 SOD-323 小封装,适用于空间受限的移动设备、消费电子与工业接口防护场合。

二、主要特性

  • 极性:双向(对称保护双向信号)
  • 反向工作电压 Vrwm:5V,适配 5V 电源或信号线
  • 击穿电压(Vbr):9.5V(典型)
  • 钳位电压(Vcl):14V(在 8/20µs、Ipp=12A 条件下典型)
  • 峰值脉冲电流 Ipp:12A(8/20µs)
  • 峰值脉冲功率 Ppp:130W(8/20µs)
  • 反向漏电流 Ir:5nA(常温典型,低泄漏)
  • 结电容 Cj:35pF(影响高速信号时需注意)
  • 防护等级:符合 IEC 61000-4-2(ESD)与 IEC 61000-4-5(浪涌)测试要求

三、典型电气参数(摘要)

  • 额定 Vrwm:5V
  • Vbr (Ibr 指定):≈9.5V
  • 钳位电压 Vcl (Ipp=12A, 8/20µs):≈14V
  • 峰值电流 Ipp:12A(8/20µs)
  • 峰值功率 Ppp:130W(8/20µs)
  • 结电容:35pF(典型)
  • 反向漏电流:5nA(典型)

(详细数值与测试条件请参见厂方数据手册)

四、封装与引脚

  • 封装:SOD-323(小型表贴,适合高密度板面)
  • 通道数:单路(单一保护节点)
  • 封装优势:体积小、寄生电感/电阻低,便于靠近被保护端口布局以获得最佳保护效果

五、典型应用场景

  • USB(低速/非差分高频敏感场合需评估电容影响)、GPIO、串口、I2C 等 5V 信号线防护
  • 移动设备充电/数据接口防护
  • 工业控制接口、传感器接口、点触开关与面板输入防护
  • 任何需满足 IEC 61000-4-2 / 4-5 的系统端口防护

六、设计与布局建议

  • 将 PESD5V0S1BA 靠近被保护连接器或接口放置,最短引线以降低寄生阻抗与提升响应速度。
  • 对于差分高速信号或对带宽敏感的接口(如高速 USB、HDMI、LVDS 等),注意其 35pF 结电容可能影响信号完整性;必要时选择低电容 TVS 器件或加入滤波方案。
  • 对于高能量浪涌,保证周围具有足够的散热和铜箔面积,以帮助吸收和分散能量。
  • 使用时遵循 PCB 良好接地实践,确保 TVS 的参考地(或对称连接)与系统地平面短路径连接。

七、可靠性与标准兼容

PESD5V0S1BA 通过 IEC 61000-4-2 和 IEC 61000-4-5 等等级测试,能提供对人体模型(HBM)、接触放电与工业级浪涌的有效防护。低漏电流设计有利于在待机与低功耗应用中保持系统性能。具体认证等级与测试等级请以厂方测试报告为准。

八、选型与注意事项

  • 若保护对象为严格的高速差分信号,应优先考虑结电容更低的屏蔽方案或专用高速 TVS。
  • 钳位电压 14V 在大电流冲击时为典型值,设计时需确保系统在被钳位时可承受该电压峰值。
  • 在生产与焊接过程中遵守制造商的回流温度曲线与储存/湿敏等级(MSL)说明,以保证可靠性。

PESD5V0S1BA 以其小体积、双向保护和较高的浪涌承受能力,适合在多种 5V 接口场景中作为第一道过压/静电防护选择。实际设计中建议结合具体信号速率与系统耐压需求,参照完整数据手册做最终选型与布局验证。

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