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UMW IRLML2502TR(UMW) IRLML2502TR
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- UMW IRLML2502TR(UMW)
- Type
- UMW
- Minimum package
- 3000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- UMW
- Electronic Component
- IRLML2502TR(UMW)
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.033g
- Electronic Component
- 1
- Electronic Component
- BM0264335285
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.25W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
IRLML2502TR (UMW) 产品概述
一、概述
IRLML2502TR 是友台半导体（UMW）推出的一款低电压逻辑驱动 N 沟增强型场效应管，封装为 SOT-23，面向便携设备与功率受限的开关场合。器件额定漏源电压为 20V，连续漏极电流 4.2A，适合在 5V 及以下逻辑电平直接驱动的小功率开关应用。
二、主要电气参数
- 类型：N 沟道 MOSFET（增强型）
- 漏源电压 Vdss：20V
- 连续漏极电流 Id：4.2A
- 导通电阻 RDS(on)：35mΩ @ Vgs=4.5V
- 阈值电压 Vgs(th)：1.2V（典型）
- 总栅极电荷 Qg：4nC @ Vgs=4.5V
- 输入电容 Ciss：300pF；输出电容 Coss：120pF；反向传输电容 Crss：80pF
- 功耗 Pd：1.25W（封装及散热条件相关）
- 工作温度范围：-55℃ ~ +150℃
- 封装：SOT-23
三、性能特点与驱动建议
该器件为逻辑电平 MOSFET，Vgs(th) 约 1.2V，Vgs=4.5V 时 RDS(on) 仅 35mΩ，导通损耗低，适合由 MCU 或逻辑电平直接驱动。Qg=4nC 表明在较高开关频率下需考虑驱动能力与栅极驱动损耗，驱动器或 MCU 输出驱动能力有限时建议并联合适的驱动芯片或使用较低阻值的驱动路径以降低开关损耗与延迟。Crss 较大时在高 dv/dt 场合需注意栅极耦合和电磁干扰。
四、热管理与实际电流能力
SOT-23 封装的 Pd=1.25W（典型条件）说明在无额外散热时器件的持续功耗受限，尽管 Id 标称为 4.2A，但实际可持续传导电流需结合 PCB 散热、铜箔面积与占空比评估。在高电流或长导通时间场景下应增大铜箔散热面积、采用多层接地/电源平面或降低重复脉冲热应力以避免过热。
五、典型应用
- 低压负载开关（开关电源次级、负载断开）
- 电池供电设备的功率路径控制与反向阻断（需配合保护电路）
- MCU/FPGA 直驱的电源管理开关与低侧功率开关
- LED 驱动与小电流 MOSFET 替代方案
六、使用注意事项
- 在设计前请参考完整数据手册确认绝对最大额定值与推荐工作区；避免超出栅极最大电压与瞬态应力。
- 布局时缩短栅极与驱动回路路径，增加源引脚的散热铜箔以降低结温。
- 在高频开关应用中关注栅极损耗与结-壳温升，必要时增加栅极电阻或使用驱动器优化开关波形。
总结：IRLML2502TR（UMW）以低 RDS(on) 与逻辑电平驱动特性在 SOT-23 小封装中提供良好的开关性能，适合便携式与功率受限场合。设计时应权衡封装热阻与实际工作电流，合理优化 PCB 散热与驱动方案以发挥最佳性能。
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