WMSIC Electronic Components

UMW PESDR0521P1

ModelPESDR0521P1
PackageDFN1006-2
BrandUMW
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
UMW PESDR0521P1
Type
UMW
Minimum package
10000 编带

Technical parameters

Electronic Component
Electronic Component
Electronic Component
UMW
Electronic Component
PESDR0521P1
Electronic Component
1
Package
DFN1006-2
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.011g
Electronic Component
1
Cj- Capacitor
0.3pF
Electronic Component
BM0228594259
Voltage
25V
Electronic Component
IEC 61000-4-5;IEC 61000-4-2
Current(Ir)
200nA
Voltage(VBR)
9.5V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

PESDR0521P1 产品概述

一、产品简介

PESDR0521P1 是友台半导体(UMW)推出的一款双向ESD保护二极管,采用微型DFN1006-2封装,专为高密度电路板和高速度接口的静电与浪涌保护设计。器件符合IEC 61000-4-2(静电放电)与IEC 61000-4-5(浪涌)标准,适用于对空间与响应速度有严格要求的消费电子、通信与工业设备。

二、主要电气参数

  • 钳位电压(Vc):25V(典型,8/20µs)
  • 击穿电压(Vbr):9.5V
  • 反向截止电压(Vrwm):5V
  • 峰值脉冲功率(Ppp):100W @ 8/20µs
  • 峰值脉冲电流(Ipp):4A @ 8/20µs
  • 反向电流(Ir):200nA
  • 结电容(Cj):0.3pF(低电容,利于高速信号)
  • 极性:双向
  • 防护类型:ESD

三、产品特点

  • 双向结构:对交流/双向数据线(如差分信号)提供对称保护,无需极性区分。
  • 低结电容(0.3pF):对高速接口影响小,适合USB、差分对等高速信号通道的ESD保护。
  • 高浪涌吸收能力:100W(8/20µs)和4A峰值脉冲电流,可承受典型的雷击浪涌/开关干扰。
  • 微型封装:DFN1006-2适合高密度布局,便于自动贴装和小型化设计。
  • 低漏电流:200nA,有利于电池供电设备降低待机损耗。

四、典型应用场景

  • USB 端口、差分数传接口(如LVDS/某些低电压差分线)
  • 智能手机、平板、可穿戴设备的外部接口保护
  • 摄像头模块、传感器接口及精密模拟输入保护
  • 工业控制与通信端口的瞬态抑制

五、PCB布局与应用建议

  • 器件应尽量靠近受保护的连接器或接口放置,走线长度越短越好,以减小感性环路。
  • 对地走线应采用短、宽的回流路径,必要时在器件附近设置过孔连接至地平面。
  • 双向器件无需方向性标注,直接并联于被保护信号线上。
  • 若系统可能遭受高于标称能量的重复浪涌,建议并联更高能量的浪涌抑制器或添加系列限流元件。

六、可靠性与使用注意

  • 在使用时请确保峰值脉冲电流与系统可能遇到的最大浪涌相匹配,不可长期超过额定脉冲规范。
  • 钳位电压为25V(在8/20µs测试条件下),对下游器件耐压要求需满足或采取额外保护措施。
  • 低漏电流特性使其适合低功耗应用,但在极低电流测量电路中应验证是否对测量精度有影响。

七、结论

PESDR0521P1 以其低电容、双向保护与较高脉冲功率吞吐能力,适合对体积、响应速度及可靠性有要求的接口保护场合。合理的PCB布局与考虑系统最大浪涌能量,能够发挥其在ESD与浪涌抑制方面的优势,提升整机的抗扰度与长期可靠性。

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