WMSIC Electronic Components

UMW SN74LVC2G14DBVR

ModelSN74LVC2G14DBVR
PackageSOT-23-6
BrandUMW
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
UMW SN74LVC2G14DBVR
Type
UMW
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
UMW
Electronic Component
SN74LVC2G14DBVR
Electronic Component
1
Package
SOT-23-6
Electronic Component
Inverter
Electronic Component
74LVC
Electronic Component
0g
Electronic Component
1
Electronic Component
BM0228090803
Operating Temperature
55℃~+125℃
Operating Voltage
1.65V~5.5V
Type
Flip-Flop
Current(IOH)
24mA
Current(IOL)
24mA
Static Current(Iq)
10uA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SN74LVC2G14DBVR 产品概述

一、产品简介

SN74LVC2G14DBVR 是一款双通道施密特触发反相器,隶属于 74LVC 逻辑家族,由 UMW(友台半导体)提供。器件支持宽工作电压范围 1.65V 至 5.5V,适用于单电源及多电平系统,专为提高抗噪声能力和改善慢沿信号整形而设计,广泛用于数字输入整形、去抖动及电平翻转等场景。器件以低功耗、快速响应及可驱动中等负载为主要特点,封装形式为 SOT-23-6,适合空间受限的便携和嵌入式应用。

二、核心参数

  • 输入类型:施密特触发器(Schmitt Trigger)
  • 工作电压:1.65V ~ 5.5V
  • 静态电流:Iq ≈ 10 µA(典型)
  • 下拉电流(IOL):24 mA
  • 上拉电流(IOH):24 mA
  • 传播延迟:tpd ≈ 2.9 ns @ 3.3V,CL = 50 pF
  • 系列:74LVC
  • 工作温度范围:-55 ℃ ~ +125 ℃
  • 封装:SOT-23-6
  • 通道数:2 路反相器

三、主要性能特点

  • 宽电源范围兼容 1.8V/2.5V/3.3V/5V 系统,便于多电平系统集成。
  • 施密特触发输入提供明显的迟滞特性,有效抑制慢上升/下降沿和外来干扰,改善逻辑可靠性。
  • 极低静态电流(约 10 µA),适合电池供电与低功耗设计。
  • 输出驱动能力强,IOH/IOL 可达 24 mA,能够直接驱动多数中等负载或后级逻辑门。
  • 快速传播延迟(≈2.9 [email protected])满足高速数字处理需求。

四、封装与热性能

器件封装为 SOT-23-6,体积小、便于表面贴装和自动化生产。工作温度范围宽(-55 ℃ 至 +125 ℃),适合工业级应用。设计时注意合理的 PCB 布局与散热路径,关键是靠近 VCC 引脚放置去耦电容以保持电源稳定并减少瞬态响应问题。

五、典型应用

  • 信号整形与去抖(按键、传感器输入)
  • 电平翻转与接口驱动(例如 TTL↔LVC 电平转换)
  • 门控逻辑与脉冲整形电路
  • 便携设备、工业控制、通信终端及消费电子等空间受限场合

六、设计建议与注意事项

  • 在 VCC 与 GND 之间放置 0.1 µF 陶瓷去耦电容,靠近芯片电源引脚以抑制瞬态噪声。
  • 避免超过规定的输入电压范围与输出电流限值,必要时采用缓冲或限流措施以保护器件。
  • 若与其他电平域接口互联,应考虑双向阻抗和总线争用,必要时加入上拉/下拉或隔离器件。
  • 大批量应用建议参考制造商数据手册中的电气特性、测试条件与封装机械图以保证可靠性。

综上,SN74LVC2G14DBVR(UMW)以其宽电压兼容、施密特输入抗噪能力、低静态功耗和良好输出驱动性能,是处理慢沿、抖动信号及需要小封装高速反相功能场合的理想选择。若需进一步的引脚图、典型应用电路或 EMC 建议,可提供更详细资料。

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