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UMW CESDBLC5V0D3
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- UMW CESDBLC5V0D3
- Type
- UMW
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- UMW
- Electronic Component
- CESDBLC5V0D3
- Electronic Component
- 1
- Package
- SOD-323
- Electronic Component
- Electronic Component
- Type
- ESD
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.038g
- Electronic Component
- 1
- Channel Count
- Electronic Component
- Cj- Capacitor
- 12pF
- Electronic Component
- BM0264554900
- Voltage
- 10V
- Electronic Component
- IEC 61000-4-2
- Current(Ir)
- 100nA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
CESDBLC5V0D3 产品概述
一、产品简介
CESDBLC5V0D3 是 UMW（友台半导体）推出的一款双向瞬态电压抑制二极管（TVS），专为保护对电压敏感的电子元件免受静电放电（ESD）及其它瞬态脉冲干扰。器件封装为 SOD-323，单路保护，适用于空间受限的消费类与工业类接口电路。
二、主要特性
- 极性：双向，适合双向数据线或差分信号保护。
- 反向截止电压（Vrwm）：5 V。
- 击穿电压（VBR）：7.8 V。
- 钳位电压：10 V（在规定冲击条件下）。
- 峰值脉冲电流（Ipp）：5 A @ 8/20 μs。
- 峰值脉冲功率（Ppp）：50 W @ 8/20 μs。
- 反向静态电流（Ir）：100 nA（静态低泄漏）。
- 结电容（Cj）：12 pF（适合大多数高速接口应用）。
- 符合 IEC 61000-4-2 防护等级，用于静电抗扰设计。
三、电气性能要点
该器件在 8/20 μs 波形下能承受 5 A 的瞬态电流并将电压钳制到约 10 V，从而在脉冲到达受保护器件前提供可靠钳位保护。低漏电流确保不会影响系统待机功耗，12 pF 的结电容在多数数据信号线中不会显著降低信号完整性，但在超高速（Gbps 级）链路上仍需评估。
四、典型应用场景
- 手机、平板和便携设备的数据接口保护（USB、Micro-USB 等）
- 显示接口与摄像头模块防护（MIPI、LVDS 等差分线对）
- IoT 终端与可穿戴设备的外部引脚保护
- 工业控制器、消费电子与接口板的通用ESD防护
五、封装与布局建议
SOD-323 小体积封装便于贴片自动化生产。为发挥最佳防护效果，建议将 CESDBLC5V0D3 靠近受保护的接口或连接器放置，并将焊盘和走线长度降到最低以减少寄生电感。双向 TVS 应横跨需保护的线对或线到线连接，而非单端接地配置。
六、选型与设计注意
- 若保护目标为单向电源线或需更低钳位，请考虑单向型 TVS；双向器件适合对称信号或可能出现反向电压的场合。
- 对于高速差分信号，应评估 12 pF 电容对眼图和时延的影响；必要时选择更低 Cj 的型号。
- 确认峰值能量（50 W@8/20 μs）与系统可能遭受的脉冲能量匹配，必要时并联或选用更高功率器件。
七、包装与订购
产品品牌：UMW（友台半导体）；封装：SOD-323；单路、双向配置。订购时请参考厂商给出的完整数据手册以获取焊接工艺、环境规范及典型应用电路。若需针对特定应用的测试数据或兼容性建议，可联系供应商支持获取样片与评估报告。
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