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UMW FDN304P
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- UMW FDN304P
- Type
- UMW
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- UMW
- Electronic Component
- FDN304P
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0g
- Electronic Component
- 1
- Electronic Component
- BM0265402633
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.1W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：FDN304P P-沟道MOSFET
FDN304P是一款高性能的P沟道MOSFET，设计用于多种低压和高效能电子应用。它的额定功率为1.1W，使其适用于需求稳定小功率控制的电路。MOSFET作为一种关键的电子元器件，广泛用于开关电源、负载驱动、信号范围处理电路等领域，而FDN304P则凭借其卓越的参数成为在这些领域中备受青睐的选择。
主要参数
电气特性
- 漏源电压 (Vdss)：该MOSFET的漏源电压为20V，能够承受的最大反向电压为20V，使得其适用于12V及次级电源的应用场合。
- 连续漏极电流 (Id)：FDN304P的连续漏极电流为2.4A，这意味着它能够在合理条件下提供良好的电流承载能力，适合用于各种负载驱动场景。
- 导通电阻 (RDS(on))：在栅极电压为4.5V时，其导通电阻为52mΩ，低导通电阻保证了高效率和较小的能耗，对于需要高效能且低发热量设计的电路尤为关键。
- 阈值电压 (Vgs(th))：该器件的阈值电压为1.5V@250μA，对于驱动电路中的驱动电平选取尤为重要。
电容特性
- 反向传输电容 (Crss@Vds)：其反向传输电容为106pF，有助于提高开关速度，降低电路的延迟，非常适合高频应用。
- 输入电容 (Ciss@Vds)：输入电容为1.312nF，较低的输入电容值意味着更高的开关频率和更快的响应时间，有利于实现更加实时的电子控制。
栅极电荷 (Qg@Vgs)：栅极电荷为[email protected]，表示激励栅极所需的电荷量，这对于快速开关应用是一个重要参数，可以帮助设计师在栅驱动电路中进行合理的选择。
工作温度：FDN304P适用的工作温度范围为-55℃至+150℃，使其能够在极端环境下安全可靠地运行，适合汽车、工业控制以及高温电子设备的应用。
封装与品牌
FDN304P采用SOT-23封装，外形小巧，便于在空间有限的小型电路板上布置。友台半导体(UMW)作为其制造商，拥有丰富的半导体产品线以及良好的市场声誉，确保了FDN304P的可靠性和品质。
应用场景
FDN304P因其优异的电气性能和较高的工作温度范围而被广泛应用于以下领域：
- 开关电源：在DC-DC转换器中用作高效开关器件。
- 负载驱动：根据需要驱动继电器、灯泡等负载，提供可靠开关控制。
- 信号处理：在音频和射频应用中用于增强信号的质量，提升整体性能。
- 汽车电子：可用于电机驱动、自动化控制等汽车电子设备中，应对不同环境下的严苛要求。
结论
FDN304P是一款性能优越的P沟道MOSFET，其结构和规格让其在多种应用中提供理想的解决方案。凭借高效能、低能耗以及适应广泛温度范围的特点，FDN304P正成为现代电子设计中的重要组成部分。对于寻求可靠、性能稳定的MOSFET解决方案的设计师来说，FDN304P无疑是一个值得优先考虑的选择。
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