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UMW SM12
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- UMW SM12
- Type
- UMW
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- UMW
- Electronic Component
- SM12
- Electronic Component
- 1
- Package
- SOT-23
- Type
- TVS
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.028g
- Electronic Component
- 1
- Channel Count
- Electronic Component
- Cj- Capacitor
- 150pF
- Electronic Component
- BM0228055368
- Voltage
- 22.5V
- Electronic Component
- IEC 61000-4-5
- Current(Ir)
- 1uA
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SM12 产品概述（UMW 友台半导体）
一、概述
SM12 是 UMW（友台半导体）推出的一款 SOT-23 封装双路 TVS 整流器件，专为静电放电（ESD）与浪涌（Surge）抑制设计。器件在 12V 工作电压体系下具有低漏电、高浪涌吸收能力与符合 IEC 61000-4-5 的防护等级，适合对 12V 供电线和一般信号线的过压保护需求。
二、主要电气参数
- 反向截止电压 Vrwm：12 V（建议持续工作电压）
- 钳位电压 Vclamp：22.5 V（Ipp=17 A, 8/20 μs）
- 峰值脉冲电流 Ipp：17 A（8/20 μs 波形）
- 反向电流 Ir：1 μA（常温、Vrwm 下）
- 结电容 Cj：约 150 pF（典型值）
- 通道数：双路（双通道于 SOT-23 中集成，常见为双向或双路单向到地结构）
- 封装：SOT-23，适合小尺寸 PCB 布局与自动化贴装
三、产品特性与优势
- 高能量吸收：支持 8/20 μs 浪涌脉冲，钳位电压低，能在浪涌事件中限制系统电压峰值，保护后级元件。
- 低漏电流：1 μA 的低反向电流有助于节省静态功耗，适用于对待机电流敏感的设计。
- 双路集成：在 SOT-23 中集成两路保护，节省 PCB 空间并降低总成本。
- 快速响应：典型 TVS 响应时间为纳秒级，可有效钳制瞬态尖峰。
- 符合 IEC 61000-4-5 标准：满足常见浪涌规范，适合工业与商用环境的电磁兼容设计需求。
四、典型应用场景
- 12 V 电源输入保护（汽车低功率子系统、工业控制、电源模块）
- 通用接口和外围设备保护（适配器接口、开关电源输入）
- 工业与消费电子设备的浪涌/ESD 保护
- 需要双路保护但空间受限的场合（路由器、门禁、监控等）
五、设计与布局建议
- 最短回流路径：将 TVS 引脚到接地的回流路径尽量缩短，使用单点或网状接地以降低寄生电感。
- 靠近敏感端口：器件应放置在被保护端口与 PCB 边缘之间，越接近源头越能有效吸收瞬态能量。
- 焊盘与热量管理：遵循 SOT-23 焊盘尺寸建议，必要时增加过孔引到大地铜箔以分散热量。
- 对于高速信号：由于 Cj≈150 pF 对高频信号有显著负载，应谨慎在高速差分线或 USB、SATA 等高速接口上使用；高速场合推荐低电容型 TVS 器件。
六、选型注意事项
- 确认单向/双向需求：本型号以 Vrwm=12V 为基准，常用于单向（到地）保护；若需双向钳位，需确认具体封装内部连接形式。
- 考虑钳位与系统容忍度：钳位电压 22.5V 表明在 17A 峰值情况下被保护端仍会承受约 22.5V 峰值，应确认后级元器件能承受该水平。
- 漏电与功耗预算：若系统对待机电流极为敏感，1 μA 漏电可接受；若需更低漏电可选更低 Ir 的型号。
如需原理图接法示意、封装尺寸图或更详细的浪涌曲线与温度特性曲线，可提供进一步资料以便在具体设计中验证器件性能。
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