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UMW AO4614
Configuration
1 options
Configuration
24+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- UMW AO4614
- Type
- UMW
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- UMW
- Electronic Component
- AO4614
- Electronic Component
- 1
- Package
- SOP-8
- Electronic Component
- 1 N +1 P
- Type
- N +P
- Electronic Component
- MOSFET
- Electronic Component
- 0.17g
- Electronic Component
- 1
- Electronic Component
- BM0230105288
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.28W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 40V；40V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AO4614 产品概述
一、概述
AO4614（UMW/友台半导体）是一款在单一SOP-8封装内集成的互补型MOSFET器件，包含1个N沟道和1个P沟道晶体管，适合在中等电压与中等电流的电源管理与开关应用中作为驱动、同步整流或互补推挽方案使用。其工作电压、导通电阻与栅极电荷在典型的10V栅压驱动下具有较好的平衡，便于与常见驱动电路配合。
二、主要电气参数
- 漏源电压（Vdss）：N沟道 40V；P沟道 40V
- 连续漏极电流（Id）：N沟道 6A；P沟道 5A
- 导通电阻（RDS(on)）：N沟道 24mΩ @ Vgs=10V；P沟道 39mΩ @ Vgs=10V
- 最大耗散功率（Pd）：1.28W（封装限制）
- 阈值电压（Vgs(th)）：N沟道 2.5V @ ID=250µA；P沟道 2.0V @ ID=250µA
- 栅极电荷（Qg）：N沟道 8.9nC @ Vgs=10V；P沟道 17nC @ Vgs=10V
- 输入/输出/反向传输电容：Ciss 516pF / 940pF，Coss 82pF / 97pF，Crss 43pF / 72pF（依次为N沟道 / P沟道）
- 工作温度范围：-55℃ 至 +150℃
三、封装与引脚
- 封装形式：SOP-8，适合表面贴装（SMT）工艺，便于批量制造与电路板密集布局。
- 单芯片内集成互补对，有利于在有限面积内实现高密度电路设计，减少外部元件数量。
四、典型应用场景
- 同步整流及降压（Buck）开关电源的高/低侧补偿与切换。
- 电源管理开关、负载切换、功率路径控制。
- 直流电机驱动、背靠背保护以及对称推挽放大电路。
- 手持与便携设备、工业控制模块中需40V耐压与数安培电流能力的场合。
五、设计与使用建议
- 推荐栅极驱动电压为10V以达到标称RDS(on)和Qg指标；若使用逻辑电平驱动需评估导通损耗与热量。
- 由于Pd受限于封装散热，注意PCB散热设计：增加散热铜箔、采用短粗引线并靠近散热层布局。
- 在高频切换场合关注Qg与Crss对开关损耗与电磁兼容的影响，必要时采用斜率控制或阻尼网络以降低振铃。
- 并联使用时需考虑导通电阻匹配与热均衡，避免单片过热。
六、总结
AO4614以其40V耐压、互补N/P对结构及SOP-8封装，为需要紧凑布局和互补开关功能的中等功率应用提供了实用选择。合理的驱动与散热设计能够发挥其低导通电阻与适中的开关特性，适合工业和消费类电源管理场景。若需更高功率或更低RDS(on)方案，可结合系统规格进一步评估器件并行或更大封装的替代件。
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