WMSIC Electronic Components

UMW MOC3021M

ModelMOC3021M
PackageDIP-6
BrandUMW
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
UMW MOC3021M
Type
UMW
Minimum package
3250 盒

Technical parameters

Electronic Component
Electronic Component
Electronic Component
UMW
Electronic Component
MOC3021M
Electronic Component
1
Package
DIP-6
Electronic Component
Thyristor Output Optocoupler
Electronic Component
0g
Electronic Component
1
Channel Count
1
Staticdv / dt
100V/us
Electronic Component
BM0230483372
Operating Temperature
55℃~+100℃
Current
60mA
Load Voltage
400V
Electronic Component
Electronic Component
Thyristor Type
Thyristor

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MOC3021M 产品概述

一、产品简介

MOC3021M 是一款双向可控硅输出的光耦合器(光电可控硅 / opto-triac),由 UMW(友台半导体)推出,封装为 DIP-6,适用于隔离驱动交流开关器件的场合。器件内部由红外发光二极管和双向可控硅输出组成,采用无过零(non-zero-cross)触发方式,便于实现任意相位的相位角调制与精确触发控制。器件工作温度范围宽(-55℃ ~ +100℃),隔离电压高达 5kVrms,可在直流或交流高压电路中提供良好的安全隔离。

二、主要特点

  • 输入侧:LED 正向压降典型值约在 1.2–1.5V 量级,允许的连续正向电流(用户数据项)可达 60mA(设计时请参照具体最大额定值并做热管理)。
  • 输出侧:双向可控硅输出,非过零触发,适合相位切割、可控硅门极触发等应用;输出有效一定值时的等效导通能力满足驱动小型门极负载(输出 It(rms) 标称 100mA)。
  • 高耐压与抗干扰:隔离电压 5kVrms,适合与电网高压侧隔离;静态 dv/dt 额定 100V/µs,需在高 dv/dt 环境下配合外部抑制网络。
  • 负载能力:最大负载电压可达 400V(适用于常见交流工况);单通道封装,DIP-6 便于穿孔安装与工程替换。

三、典型应用

  • 灯光调光、家电相位控制(非过零调光、半波与相位切割控制)。
  • 小功率电机速度控制与软启动触发电路。
  • 固态继电器(SSR)驱动单元与隔离开关控制。
  • 工业控制与仪表中对高压侧驱动的安全隔离与触发。

四、典型电气参数(基于提供数据)

  • 可控硅类型:双向可控硅(光耦输出)
  • 过零功能:无(非过零触发)
  • LED 正向压降 Vf:约 1.2–1.5V(视测试条件而定)
  • 输出有效电流 It(rms):100mA
  • 隔离电压 Vrms:5kV
  • LED 正向电流(限流设计参考):60mA(请以厂方最大额定与脉冲规格为准)
  • 额定负载电压:400V
  • 静态 dv/dt:100V/µs
  • 通道数:1,封装:DIP-6,工作温度:-55℃ ~ +100℃

五、使用与注意事项

  1. 输入驱动:LED 需串联限流电阻,计算公式 R = (Vin_peak - Vf) / If_expected,设计时选择 If 不超过器件最大额定并考虑脉冲/占空比散热。
  2. 输出侧抗干扰:在高 dv/dt 或感性负载下,建议在主电路并联 RC 抑制网络或使用 snubber,以防误触发或关断失败。
  3. 门极耦合:由于输出为光控可控硅,驱动目标主可控硅门极时应考虑门极电阻与触发电流需求,确保触发可靠。
  4. 环境与散热:尽量避免长期在高温与高正向电流下工作,遵循器件功率耗散与热阻规范。
  5. PCB 布局:保持输入与输出之间的爬电距离与绝缘间隙,符合高压隔离设计规范,确保隔离电压与安规要求。

六、总结

MOC3021M 是一款面向相位控制与高压隔离驱动的非过零双向可控硅光耦,具有高隔离电压、适用广泛的负载电压范围及典型的 100mA 输出能力。其非过零特性使其在需要任意相位触发的场合更为灵活,但对 dv/dt 较敏感,需配合外部抑制电路以保证稳定可靠。具体设计与选型时,请以官方规格书为准,并根据实际应用加载特性进行合理的限流、滤波与热设计。

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