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UMW 4N60L
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- UMW 4N60L
- Type
- UMW
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- UMW
- Electronic Component
- 4N60L
- Electronic Component
- 1
- Package
- TO-252
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.46g
- Electronic Component
- 1
- Electronic Component
- BM0230669156
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 36W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 600V
- Capacitor(Ciss)
- 580pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
4N60L — UMW（友台）600V N沟道功率MOSFET产品概述
一、产品概述
4N60L 是一款表面贴装（TO-252 / DPAK）结构的 N 沟道功率 MOSFET，面向中高压开关应用。器件耐压 600V，连续漏极电流 Id 为 4A（器件在规定散热条件下），适合离线开关电源、反激/正激变换、LED 驱动与高压开关场合。封装兼顾散热与表贴装配的可行性，适合自动贴装与回流焊工艺。
二、主要电气参数
- 漏源电压 Vdss：600V
- 连续漏极电流 Id：4A（Tc 条件参考）
- 导通电阻 RDS(on)：2Ω @ Vgs = 10V（较高，适合中低电流方案）
- 阈值电压 Vgs(th)：4V @ 250μA（门槛偏高，需合适门极驱动电压）
- 总栅极电荷 Qg：14.8nC @ 10V（栅极驱动能量中等）
- 输入电容 Ciss：580pF（开关过渡期间存在一定电容充放电损失）
- 功耗 Pd：36W（常规 PCB 散热）；器件在壳体基准面 Tc 条件下散热能力可达 104W
- 工作温度：-55℃ ~ +150℃
三、性能特点与设计要点
- 高耐压（600V）适合高压侧开关；RDS(on) 较大，导通损耗在较高电流下明显，应权衡开关频率与导通损耗。
- 阈值 4V，实际驱动推荐 Vgs = 10V 以降低 RDS(on)，门极驱动器需提供足够电流以应对 Qg=14.8nC 的充放电。
- Ciss 较大，对高速开关设计需注意栅极回路阻抗与电磁兼容（EMI）控制。
- DPAK 封装便于表贴生产，板级散热设计（铜箔面积、热过孔、散热垫）对器件热平衡关键。
四、典型应用
- 离线开关电源（SMPS）高压开关管
- 反激/正激变换器、LED 恒流驱动电源
- 高压开关和保护电路、工业电源模块
- 要求耐压高、功率中等且成本敏感的电源解决方案
五、封装与可靠性建议
- 封装：TO-252（DPAK），支持回流焊与自动贴装流程。
- 温度管理：建议在 PCB 采用大面积铜箔与多过孔热 vias，将热量传导至散热层或散热片；工作结温应控制在器件额定范围内。
- 使用注意：防静电处理，合理选择驱动电路以避免栅极过压或振铃；焊接遵循封装回流温度曲线，避免超温影响可靠性。
4N60L 适合在需要 600V 抗压且电流在数安培量级的中高压电源场合使用，设计时应重点考虑导通损耗与栅极驱动能量的匹配，以及 PCB 散热优化。
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