WMSIC Electronic Components

UMW FDN335N

ModelFDN335N
PackageSOT-23
BrandUMW
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
UMW FDN335N
Type
UMW
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
UMW
Electronic Component
FDN335N
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0g
Electronic Component
1
Electronic Component
BM0226612793
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

FDN335N 产品概述

概述

FDN335N是一款高性能的N沟道场效应管(MOSFET),具有1W的功率额定值和20V的漏源电压承受能力,适用于各种电子电路和应用场合。这款器件由友台半导体(UMW)生产,封装采用流行的SOT-23小型封装,既节省空间又方便安装,适合于用户在空间受限的设计中使用。FDN335N凭借其出色的电气性能和广泛的工作温度范围,成为众多低功耗和中功率电子设备的理想选择。

主要参数

FDN335N的工作电气特性包括:

  • 功率(Pd): 该MOSFET在正常工作条件下能够承受最大功率1W,确保在负载变化时的稳定性。
  • 反向传输电容(Crss@Vds): 在10V的漏源电压下,反向传输电容为40pF,这使得器件在开关转换时具有较低的损耗。
  • 导通电阻(RDS(on)@Vgs,Id): 在栅源电压2.5V和漏极电流1.5A时,导通电阻为100mΩ,表明在低电压操作时的高导通效率,有助于降低能量损耗。
  • 工作温度:(-55℃~+150℃)的宽广温度范围使得FDN335N能够在极端环境下稳定工作,适合工业和汽车电子等需要耐高温和低温操作的应用。
  • 栅极电荷(Qg@Vgs): 在4.5V的栅源电压下,栅极电荷为3.5nC,这一数值暗示着快速开关特性,适合快速脉冲应用。
  • 漏源电压输入(Vdss): 该器件支持最高20V的漏源电压,能够满足大多数小信号和中功率输出需求。
  • 连续漏极电流(Id): 具有1.7A的最大连续漏极电流,能够适应一定负载下的日常工作状态。
  • 阈值电压(Vgs(th)@Id): 该MOSFET的阈值电压为1.5V@250µA,这使得它可以在较低的栅极驱动电压下导通,提高了设计灵活性。

应用场景

FDN335N广泛应用于多种领域,主要包括:

  1. 开关电源: 由于其高效的导通性能和低导通电阻,FDN335N可用于开关电源电路中的主开关元件,提高电源转换效率。

  2. 负载开关: 可作为负载开关,控制电流流通,为各种电器设备提供高效的开关控制,尤其是在充电设备和电池管理系统中。

  3. 信号放大: 得益于其较高的增益特性,FDN335N适用于RF功率放大器、前置放大器等中频信号放大的应用。

  4. 马达驱动: 在需要快速频繁开启与关闭的马达驱动应用中,FDN335N因其低开关损耗和良好的热管理能力而显得尤为重要。

总结

FDN335N是一款性价比高、性能可靠的N沟道MOSFET,具有广泛的应用可能性。在设计方案中,工程师可以依靠其高开关频率、导通电阻低以及宽工作温度范围的特性,轻松满足现代电子设备对高能效和高可靠性的需求。由于其兼容性和适应性,FDN335N已经成为许多工程师和设计师首选的元器件之一,是创新设计中不可或缺的部分。无论是在消费电子、工业控制还是汽车电子领域,FDN335N都将为用户提供强有力的支持。

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