WMSIC Electronic Components

UMW ESDA14V2L

ModelESDA14V2L
PackageSOT-23
BrandUMW
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
UMW ESDA14V2L
Type
UMW
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
UMW
Electronic Component
ESDA14V2L
Electronic Component
1
Package
SOT-23
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.036g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
60pF
Electronic Component
BM0230669157
Voltage
30V
Electronic Component
IEC 61000-4-4;IEC 61000-4-5;IEC 61000-4-2
Current(Ir)
500nA
Voltage(VBR)
15V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ESDA14V2L 产品概述

一、产品简介

ESDA14V2L 是友台半导体(UMW)推出的一款双路低电容静电放电保护器件,封装采用 SOT-23,专为接口信号线提供高效的瞬态浪涌与静电防护设计。器件在保持较低结电容(Cj≈60pF)同时,提供高达 300W(8/20μs)的峰值脉冲能力,适用于高速信号线与敏感模拟/数字接口的 ESD 与浪涌防护。

二、主要性能指标

  • 钳位电压(Vc): 30V(典型)
  • 击穿电压(Vbr): 15V
  • 反向工作峰值电压(Vrwm): 12V
  • 峰值脉冲功率(Ppp): 300W @ 8/20μs
  • 结电容(Cj): 60pF(典型)
  • 反向漏电流(Ir): 500nA(常温)
  • 通道数: 双路(两通道独立保护)
  • 防护等级/兼容标准: 满足 IEC 61000-4-2(ESD)、IEC 61000-4-4(快速瞬变)、IEC 61000-4-5(浪涌)测试要求
  • 封装: SOT-23,便于表面贴装和自动化生产

三、产品特性与优势

  • 低电容设计(60pF)对高速数据线影响小,适合 USB、Ethernet、HDMI 等高速接口;
  • 高峰值吸收能力(300W)能有效钳位并消散来自电磁干扰或雷击侧链的瞬态能量;
  • 低漏电流(500nA)减少对高阻输入的影响,适用于模拟前端与传感器接口;
  • 双通道结构在 SOT-23 小封装内实现两路保护,节省 PCB 面积和成本。

四、典型应用场景

  • 手机、平板、便携设备的 I/O 接口保护(USB、耳机接口);
  • 工业控制与仪表的信号接口防护;
  • 摄像头模组、传感器和 ADC 前端的静电防护;
  • 通讯设备、机顶盒、显示器等需要兼顾高速性能与防护能力的场合。

五、封装与布局建议

SOT-23 占板面积小,建议将 ESDA14V2L 靠近被保护的接口或连线端子放置,且尽量缩短到接地面的回流路径以提高浪涌能量散逸效率。对于高速差分信号,应注意走线阻抗匹配,避免保护器件引入过多串联电感或不必要的走线环路。

六、设计与选型注意事项

  • 若信号对结电容敏感(如高速差分 1Gbps 以上),需评估 60pF 对信号带宽的影响;
  • Vrwm=12V,适用于低压接口;高压侧或更高浪涌电压场景需选用更高 Vrwm 的器件;
  • 在高温或长期工作条件下,应验证漏电流与钳位性能随温度的变化是否满足系统要求。

七、可靠性与注意事项

器件通过 IEC 61000-4-2/4/5 等标准测试,具备良好的抗静电和抗浪涌能力。存储与焊接时注意避免长时间在潮湿环境中放置,遵循一般 MOS/半导体元件的回流焊温度曲线与湿热储存规范。

如需样片测试或获取完整数据手册(包含典型钳位曲线、脉冲测试条件和引脚排列),建议联系 UMW(友台半导体)或其授权代理以获得详细电气图与可靠性数据。

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