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UMW CESD3V3D3
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- UMW CESD3V3D3
- Type
- UMW
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- UMW
- Electronic Component
- CESD3V3D3
- Electronic Component
- 1
- Package
- SOD-323
- Electronic Component
- Electronic Component
- Type
- ESD
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.027g
- Electronic Component
- 1
- Channel Count
- Electronic Component
- Cj- Capacitor
- 120pF
- Electronic Component
- BM0230945369
- Voltage
- 13V
- Electronic Component
- IEC 61000-4-5；IEC 61000-4-2
- Current(Ir)
- 10uA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
CESD3V3D3 产品概述
一、产品简介
CESD3V3D3（UMW / 友台半导体）为单路双向瞬态抑制二极管（ESD/浪涌保护），封装为 SOD-323，专为 3.3V 工作环境下的输入/输出、数据线及小功率电源防护设计。器件遵循 IEC 61000-4-2（静电放电）与 IEC 61000-4-5（浪涌）等级要求，具备快速钳位与高脉冲吸收能力，可有效保护下游敏感元件免受瞬态过压损坏。
二、主要电气参数
- 极性：双向（Bidirectional）
- 反向截止电压 Vrwm：3.3 V
- 击穿/雪崩电压（Vbr）：约 5.9 V
- 钳位电压（Vc）：13 V（在 8/20 μs 波形下）
- 峰值脉冲电流 Ipp：16 A（8/20 μs）
- 峰值脉冲功率 Ppp：210 W（8/20 μs）
- 反向漏电流 Ir：≤ 10 μA
- 结电容 Cj：约 120 pF
- 通道数：单路
三、特性与优势
- 双向结构适合差分信号或无固定极性的接口防护；
- 低漏电流保证在常态下不影响器件功耗与电平；
- 高能量吸收（210 W, 8/20 μs）与 16 A 峰值脉冲电流，能应对常见的浪涌与故障脉冲；
- 快速钳位响应，最大钳位电压约 13 V，有效限制瞬态电压峰值；
- 小型 SOD-323 封装，便于空间受限的移动设备与外设接口布局。
四、应用场景
- 3.3 V 系统的 I/O 保护：UART、GPIO、控制信号线；
- 接口和通信端口保护：USB（低速/全速需评估电容影响）、RS-232/RS-485、CAN 总线的辅助防护；
- 电源输入与外围接口的浪涌与静电防护；
- 工业控制、消费电子、物联网终端等空间受限设备。
五、布局与使用建议
- 器件应尽量靠近外部连接器或易受干扰的接口放置，尽量缩短引线长度以降低感性环路；
- 对地回流路径应低阻抗、短且直接，若有 PCB 地平面，务必使用多孔过孔连接；
- 结电容 120 pF 较大，高速差分信号（高速 USB/USB3.0、千兆以太网等）应评估对信号完整性的影响；如影响明显，考虑使用低电容专用 TVS 或针对差分高速的保护器件；
- 若需更低钳位或更高能量吸收，可并联或与串联阻抗配合使用，但需验证功率分配与热稳定性。
六、注意事项与选型建议
- Vrwm 3.3 V，推荐用于 3.3 V 及以下系统；在 5 V 系统中使用会导致频繁进入导通或增加泄漏，应慎重；
- 钳位电压 13 V 在脉冲条件下能保护大多数外围器件，但对极低耐压元件仍需配合限流措施；
- 结电容较高，适用于低速或中速通信线、供电线和通用 I/O；对高频、高速差分链路，选型时优先考虑低电容方案。
CESD3V3D3 以其紧凑封装、合规的抗静电与浪涌能力、以及在 3.3 V 领域的良好适配性，适合用于需要可靠瞬态防护且 PCB 空间受限的多种电子产品。
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