WMSIC Electronic Components

UMW BC857C

ModelBC857C
PackageSOT-23
BrandUMW
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
UMW BC857C
Type
UMW
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
UMW
Electronic Component
BC857C
Electronic Component
1
Package
SOT-23
Electronic Component
1 PNP
Electronic Component
Transistor(BJT)
Electronic Component
0.033g
Electronic Component
1
Electronic Component
BM0211497661
Operating Temperature
65℃~+150℃
Transistor Type
PNP
Frequency(f T)
100MHz
Power Dissipation(Pd)
200mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BC857C 产品概述

概要

BC857C 是一种由友台半导体(UMW)生产的PNP型双极晶体管(BJT),它属于SOT-23-3封装类型。这种小型化的封装使其非常适合用于空间有限但要求高性能的电子设备中。

基础参数

  • 功率(Pd): 200 mW
    • 这表明BC857C在正常工作条件下可以承受的最大功率,确保在设计时不会超过这个阈值,以避免过热和损坏。
  • 商品分类: 三极管(BJT)
    • 作为一种基本的电子开关和放大器元件,BJT广泛应用于各种电子系统。
  • 工作温度: -65℃ ~ +150℃
    • 宽泛的工作温度范围使得BC857C能够在极端环境下稳定运行,适用于工业、汽车和航空等领域。
  • 晶体管类型: PNP
    • PNP型BJT在电路设计中常用于负载开关、信号放大和逻辑门等应用。
  • 特征频率(fT): 100 MHz
    • 高特征频率意味着BC857C能够处理高频信号,适用于通信、射频和其他高频应用。
  • 直流电流增益(hFE@Ic,Vce): 420 @ 2 mA, 5 V
    • 高的直流电流增益(hFE)表明该晶体管具有良好的放大能力,在信号放大和开关应用中非常重要。
  • 集射极击穿电压(Vceo): 45 V
    • 这是指在集电极与基极之间允许的最大电压,确保在正常工作条件下不会发生击穿现象。
  • 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 500 mV @ 100 mA, 5 mA
    • 低的饱和电压意味着在开关状态下能耗较低,提高了效率和可靠性。
  • 集电极截止电流(Icbo): 100 nA
    • 这是指当基极未接通时,集电极到发射极之间的漏电流,通常用于评估晶体管的漏电特性。
  • 集电极电流(Ic): 100 mA
    • 这是指BC857C能够承受的最大连续集电极电流,用于确定其在实际应用中的负载能力。

应用场景

BC857C由于其小型化的封装和优秀的性能参数,广泛应用于以下几个领域:

  1. 信号放大和开关:

    • 由于其高直流电流增益和低饱和电压,BC857C非常适合用于信号放大和开关应用,如音频设备、传感器接口等。
  2. 通信设备:

    • 高特征频率使其适用于通信设备中的高频信号处理,如无线通信模块、射频前端等。
  3. 工业控制系统:

    • 宽泛的工作温度范围和高可靠性使其成为工业控制系统中的理想选择,例如在PLC系统、传感器驱动等应用中。
  4. 汽车电子:

    • 在汽车电子系统中,BC857C可以用于各种控制和监测模块,如发动机控制单元、安全系统等。
  5. 消费电子:

    • 小型化的SOT-23-3封装使其非常适合用于手机、平板电脑、智能家居设备等消费电子产品中。

设计注意事项

在使用BC857C时,以下几点需要特别注意:

  • 热管理:

    • 尽管BC857C具有200 mW的最大功率,但在高负载或高频应用中仍需要考虑散热问题,以避免过热导致的故障。
  • 电压和电流限制:

    • 确保在设计时不超过指定的集射极击穿电压(Vceo)和集电极电流(Ic),以防止晶体管损坏。
  • 基极驱动:

    • 由于BC857C具有高直流电流增益,基极驱动电流需要精确控制,以避免过载或欠载现象。

总结

BC857C是一种性能优异、应用广泛的PNP型BJT,尤其适合于需要高频处理、低功耗和高可靠性的电子系统。通过了解其详细参数和应用场景,可以更好地利用这一元件来设计出高效、稳定的电子产品。

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