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UMW AO3403A
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- UMW AO3403A
- Type
- UMW
- Minimum package
- 3000
Technical parameters
- Electronic Component
- UMW
- Electronic Component
- AO3403A
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.033g
- Electronic Component
- 1
- Electronic Component
- BM0229355777
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.4W
- Electronic Component
- 3000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 260pF
- Output Capacitor(Coss)
- 37pF
- Gate (Qg)
- 5.9nC@10V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AO3403A 产品概述
一、概述
AO3403A 是一款面向表面贴装的 P 沟道 MOSFET，器件由友台半导体（UMW）生产，采用 SOT-23 封装。器件额定漏源电压为 30 V，适合低电压电源路径和高侧开关应用；在常温（Ta）下连续漏极电流为 2.6 A，功耗能力为 1.4 W（Ta）。器件体积小、引脚兼容性好，适用于便携设备与功率受限的电路板设计。
二、主要特性
- P 沟道结构，便于实现高侧开关与电源路径反向阻断。
- 漏源耐压 Vdss：30 V。
- 连续漏极电流 Id（Ta）：2.6 A（器件热限内）。
- 导通电阻 RDS(on)：约 88 mΩ（VGS = -10 V），约 103 mΩ（VGS = -4.5 V）。
- 阈值电压 VGS(th)：约 1 V（测量电流 250 μA）。
- 总栅极电荷 Qg（10 V）：5.9 nC，便于驱动评估。
- 输入电容 Ciss：260 pF，反向传输电容 Crss：20 pF，输出电容 Coss：37 pF。
- 工作温度范围：-55 ℃ 至 +150 ℃。
三、电气参数重点解析
导通电阻在典型驱动电压下处于亚欧姆量级，适合几百毫安至数安培级负载；但在 2–3 A 区间器件发热不可忽视，SOT-23 封装的散热能力有限，需通过 PCB 铜箔和散热设计降低结温。较低的栅极电荷（5.9 nC）意味着驱动损耗较低，适合由 MCU 或专用驱动器直接驱动，但注意 P 沟道的驱动极性（门极相对于源极需施加适当负压以导通）。
四、典型应用场景
- 电池供电设备的高侧开关与电源选择。
- 便携式设备的负载断开与节电管理。
- 电源路径反向保护与热插拔检测。
- 小功率电机、继电器驱动与电源转换的保护回路。
五、封装与热管理
SOT-23 小型封装适合紧凑 PCB，但散热面积受限。设计要点包括：增大器件焊盘周围的铜箔、在器件背面或多层板中使用散热过孔、靠近热源布局以缩短热路径。在持续高电流工作下，应计算结温并保证在安全范围内。
六、选型与使用建议
- 若负载电流常在 1–2 A 范围且占空比或工作时间较短，AO3403A 是合适选择。
- 对于持续高电流或要求更低 RDS(on) 的场合，考虑更大封装或并联器件。
- 栅极驱动时注意 VGS 极性与限幅，避免超出最大栅源电压；上电/掉电瞬态要加缓冲或 RC 限制以防错导通。
- 布局上缩短栅极和源极回路、在电源侧布置去耦电容以抑制振荡与浪涌。
七、结论
AO3403A 在 30 V 级别、SOT-23 封装的 P 沟道 MOSFET 中提供了均衡的导通电阻、合理的驱动需求和紧凑的封装尺寸，适用于便携设备和低功率高侧开关场合。设计时关注散热与栅极驱动细节，可在保证可靠性的前提下发挥其性能。
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