WMSIC Electronic Components

UMW SS54

ModelSS54
PackageSMA(DO-214AC)
BrandUMW
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
UMW SS54
Type
UMW
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
UMW
Electronic Component
SS54
Electronic Component
1
Package
SMA(DO-214AC)
Electronic Component
Schottky Diode
Electronic Component
0g
Electronic Component
1
Electronic Component
BM0228218882
Current
5A
Diode
Electronic Component
Current(Ir)
1mA@40V
(Vf)
550mV@5A
Electronic Component
55℃~+150℃
Electronic Component
Electronic Component
Electronic Component
2000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SS54 肖特基二极管(UMW / 友台半导体)产品概述

一、产品简介

SS54 为独立式肖特基整流二极管,UMW(友台半导体)生产,封装为 SMA (DO-214AC)。该器件面向中高电流整流与开关电源、续流保护等场景,具有低正向压降与高速恢复特性,适用于空间受限且要求高效率的电源设计。

二、主要参数

  • 顶名型号:SS54
  • 封装:SMA (DO-214AC)
  • 直流整流电流(Io):5 A
  • 直流反向耐压(Vr):40 V
  • 正向压降(Vf):约0.55–0.60 V @ 5 A(典型值)
  • 反向漏电流(Ir):1 mA @ 40 V(典型测量条件)
  • 非重复峰值浪涌电流(Ifsm):150 A
  • 工作结温范围:-55 ℃ 至 +150 ℃

三、特点与优势

  • 低正向压降:在大电流工况下显著降低功耗与发热,提高整机效率。
  • 低反向恢复特性:肖特基结构无显著反向恢复电荷,适合高频开关应用,减少开关损耗与电磁干扰。
  • 良好冲击承受能力:150 A 峰值浪涌电流支持启动或短时过载场景。
  • 宽温度范围:-55℃—150℃ 结温范围,适应工业级工作温度要求。

四、封装与热性能

SMA(DO-214AC)封装兼顾散热与占板面积,适合波峰/回流焊工艺。尽管封装有一定散热能力,长期工作电流建议做热设计与散热管理:保持结温在安全范围内(常规设计宜低于125℃),在高环境温度或连续5 A 负载下应配合散热铜箔或散热器以控制结温。

五、典型应用

  • 开关电源(SMPS)整流与续流二极管
  • 汽车电子电源保护(在符合温升与漏电要求下)
  • 电池充放电保护与整流电路
  • 逆变器、DC-DC 转换模块、车载充电器等高频电源系统

六、安装与可靠性注意事项

  • 焊接建议遵循厂家回流/波峰焊温度曲线,避免过高峰值温度与过长热暴露时间。
  • 反向漏电流随温度显著上升,设计时需考虑额定环境温度下的漏电与热稳定性。
  • 若电路可能出现反向高压尖峰,建议增设抑制元件(TVS、电阻或RC 抑制网络)以保护肖特基结不被瞬态过压损坏。
  • 在长期高应力或汽车等严苛环境应用,建议进行可靠性验证(热循环、机械振动、湿热测试等)。

七、选型建议

  • 若系统工作电压或浪涌高于标称值,应选用更高 Vr 或更大 Ifsm 余量的型号。
  • 对效率要求更高或电流更大的场合,可考虑更低 Vf 或更大封装的肖特基器件。
  • 在温度或漏电敏感应用中,重点比对 Ir 随温度的上升曲线与热阻参数,必要时联系供应商获取详细器件曲线与测试条件。

如需完整电气特性曲线、热阻(RθJC/RθJA)、典型正向/反向特性图或封装尺寸与回流焊工艺建议,请提供您的具体应用工况或索取 UMW 官方数据手册以获取精确参数。

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