WMSIC Electronic Components

UMW STD20NF06L

ModelSTD20NF06L
PackageTO-252-2
BrandUMW
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
UMW STD20NF06L
Type
UMW
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
UMW
Electronic Component
STD20NF06L
Electronic Component
1
Package
TO-252-2
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0g
Electronic Component
1
Electronic Component
BM0228273206
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
55W
Electronic Component
Electronic Component
Electronic Component
2500
Voltage(Vdss)
60V
Capacitor(Ciss)
1.562nF@25V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

STD20NF06L 产品概述

一、产品简介

STD20NF06L 是 UMW(友台半导体)推出的一款 N 沟道功率 MOSFET,单只器件面向中等功率开关与驱动应用。器件采用 TO-252-2(DPAK)封装,兼顾散热性能与表面贴装组装方便,适用于需要 60V 耐压与较大导通电流的电源与驱动场合。

二、关键参数

  • 类型:N 沟道 MOSFET(单个)
  • 漏源电压 Vdss:60 V
  • 连续漏极电流 Id:30 A
  • 导通电阻 RDS(on):25 mΩ @ Vgs = 10 V
  • 最大耗散功率 Pd:55 W
  • 阈值电压 Vgs(th):1.6 V @ Id = 250 μA
  • 栅极总电荷 Qg:25 nC @ Vgs = 10 V
  • 输入电容 Ciss:1.562 nF @ 25 V
  • 反向传输电容 Crss:66.8 pF
  • 工作温度范围:-55 ℃ ~ +150 ℃
  • 封装:TO-252-2(DPAK)

三、主要特点

  • 60V 的耐压等级可覆盖大多数汽车外围和工业电源应用(注意需依据实际工作电压选择)。
  • 低至 25 mΩ 的 RDS(on)(在 10V 驱动下)可实现较低的导通损耗,适合连续导通或低压差的功率开关场景。
  • 中等栅极电荷(25 nC)与较大的输入电容,表明在快速开关时对驱动能力有一定要求。
  • TO-252-2 封装兼顾散热与表贴安装,便于 PCB 散热设计与自动化生产。

四、典型应用场景

  • 开关电源(DC-DC、同步整流)
  • 电机驱动与负载开关(中小功率)
  • 逆变器与太阳能外围功率管理(中低电压侧)
  • 汽车电子(非高压主回路)与工业控制系统的开关元件

五、设计与使用建议

  • 为发挥最低 RDS(on),建议驱动电压达到 10 V;在逻辑电平驱动(如 5 V)下 RDS(on) 会上升,应验证导通损耗。
  • Qg = 25 nC 表明在高频切换时对驱动电流要求较高,选择合适的栅极驱动器与栅阻,以在开关速度与振铃间取得平衡。
  • 由于 Ciss 较大,注意驱动器的瞬态电流与电平转换时间,合理安排栅极电阻和布线。
  • 在感性负载场合应加速回路保护(飞轮二极管、RC 缓冲或 TVS),以控制 Vds 峰值与减小 Crss 引起的 Miller 效应。
  • TO-252-2 封装需做好 PCB 热扩散与散热铜箔设计,必要时并联多片或预留散热器以满足高功耗工况。

六、可靠性与测试

器件工作温度覆盖 -55 ℃ 至 +150 ℃,适应宽温度范围应用。建议在最终电路中进行温升、热阻和开关损耗测试,并按应用环境做加速老化与热循环验证,确保长期可靠性。

如需器件封装图、典型特性曲线或更详细的热参数(θJA/θJC),建议参考 UMW 正式数据手册或联系厂商技术支持以获得完整资料。

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