WMSIC Electronic Components

UMW ESDU5V0H4

ModelESDU5V0H4
PackageSOT-23-6
BrandUMW
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
UMW ESDU5V0H4
Type
UMW
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
UMW
Electronic Component
ESDU5V0H4
Electronic Component
1
Package
SOT-23-6
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.043g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
0.8pF
Electronic Component
BM0230945372
Voltage
15V
Electronic Component
IEC 61000-4-2;IEC 61000-4-5
Current(Ir)
1uA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ESDU5V0H4 产品概述

一、产品简介

ESDU5V0H4 是友台半导体(UMW)推出的一款四路单向瞬态抑制器(TVS),封装为 SOT-23-6,专为微处理器 I/O、记忆体、接口总线等敏感信号线提供浪涌与静电放电(ESD)保护。器件具有低电容、快速响应和高峰值能量吸收能力,适合高速数据链路和受限空间的保护方案。

二、关键性能参数

  • 极性:单向
  • 通道数:四路
  • 反向截止电压 Vrwm:5 V(推荐工作电压上限)
  • 击穿电压 Vbr:8.8 V
  • 钳位电压(Clamp):15 V(典型,8/20 μs)
  • 峰值脉冲电流 Ipp:5 A @ 8/20 μs
  • 峰值脉冲功率 Ppp:125 W @ 8/20 μs
  • 反向电流 Ir:1 μA(在 Vrwm 条件下)
  • 结电容 Cj:0.8 pF(低电容,适合高速信号)
  • 防护等级/标准:符合 IEC 61000-4-2(ESD)与 IEC 61000-4-5(浪涌)
  • 封装:SOT-23-6
  • 品牌:UMW(友台半导体)

三、产品特点与优势

  • 低结电容(0.8 pF),对高速接口(USB、LVDS、MIPI 等)影响小,信号完整性损失低。
  • 单向设计,适用于有明确地线参考的 I/O 保护场合。
  • 高能量吸收能力(125 W@8/20 μs)配合 5 A 峰值脉冲电流,能有效抑制常见浪涌与冲击。
  • 低漏电(1 μA),适合对静态电流敏感的移动与便携设备。
  • SOT-23-6 小封装,便于在空间受限的消费类与工业板卡上布局。

四、典型应用场景

  • 智能手机、平板与便携设备的外部接口防护(USB、耳机、充电口)
  • 摄像头模块、显示接口(MIPI、LVDS)高速信号线保护
  • 工业控制与通信设备的串口、以太网PHY 辅助防护(作二级/三级保护)
  • 汽车非关键车载信息娱乐系统接口(需注意车规级要求)

五、封装与电路连接建议

  • 封装:SOT-23-6,四路共地结构,推荐将地引脚短且粗地连接至大面积接地层以利散热与能量释放。
  • 引脚连接:每路信号线通过 TVS 与地之间导通抑制瞬态,单向器件在正向导通时表现为低电阻泄放至地。
  • 工作电压:器件 Vrwm=5 V,应用于 5 V 及以下电平的保护,避免长期超过 Vrwm 导致漏电或误触发。

六、PCB 布局与使用注意

  • TVS 与被保护信号点之间走线尽量短、宽,信号线至 TVS 引脚的回流路径应最短,降低感性环路。
  • 将 TVS 连接到同一地平面,避免多层分散接地造成高频回流问题;必要时在附近布置多颗过孔形成低阻抗接地。
  • 对于差分或高频差分线,优先选择放置在靠近接口处,避免远端保护导致寄生电感影响信号完整性。
  • 在要求更高的浪涌或车规场合,建议与串联电阻、磁珠或更高能量的浪涌元件配合使用,形成多级防护。

总体而言,ESDU5V0H4 以其低电容、高能量吸收与紧凑封装,适合对高速信号线进行可靠的瞬态抑制保护。选型时请核对实际工作电压与环境温度,并根据系统级防护需求设计合理的多级保护拓扑。若需详细管脚图、典型波形或样片测试报告,可联系供应商获取数据手册与评估样品。

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