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UMW NTR4503NT1G
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- UMW NTR4503NT1G
- Type
- UMW
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- UMW
- Electronic Component
- NTR4503NT1G
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- MOSFET
- Electronic Component
- 0g
- Electronic Component
- 1
- Electronic Component
- BM0228532382
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 730mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 135pF
- Gate (Qg)
- 3.6nC@10V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
NTR4503NT1G 产品概述
一、概述
NTR4503NT1G 是友台半导体（UMW）推出的一款30V级低压降功率MOSFET，采用SOT-23小封装设计，针对便携设备和空间受限的功率管理场景优化。器件兼顾了较低的导通电阻与适中的栅极电荷，适用于开关频率不很高但对效率和封装面积有要求的应用。
二、主要电气参数
- 漏源电压 Vdss：30V
- 连续漏极电流 Id：2.5A
- 导通电阻 RDS(on)：85mΩ @ Vgs=10V, Id=2.5A
- 阈值电压 Vgs(th)：1V（典型）
- 耗散功率 Pd：730mW（封装及环境依赖）
- 总栅极电荷 Qg：3.6nC @ Vgs=10V
- 输入电容 Ciss：135pF
- 反向传输电容 Crss：15pF @ 15V
- 工作温度范围：-55℃ ~ +150℃
三、主要特性与优势
- 封装小巧（SOT-23），适合高密度PCB布局；
- Vdss=30V 适用于多数单电池或低压电源系统；
- 典型 RDS(on)=85mΩ 在10V栅压下能提供较好的导通损耗控制；
- Qg 3.6nC 和 Ciss/Crss 的组合在门极驱动能量与开关损耗之间取得平衡，方便驱动电路设计；
- 宽温工作范围适合工业级与汽车电子周边应用（需根据具体场景确认认证）。
四、典型应用场景
- 系统电源开关、负载开/关控制；
- 低压降电源分配与保护电路；
- DC-DC 转换器（作为同步整流或切换管，适用于中低频场合）；
- 便携式设备和物联网终端的电源管理；
- 小电流马达驱动、信号切换与反向保护（需结合电路和热设计评估）。
五、封装与热管理建议
SOT-23 小封装带来封装热阻相对较高的特性，器件Pd 730mW 为典型散热能力，实际可用功率受PCB铜箔面积和环境温度影响显著。设计建议：
- 在PCB上为漏极/散热焊盘留足够铜箔面积并采用多层接地/散热层；
- 在连续较大电流工作时进行热仿真与实测，必要时选择并联器件或更大封装；
- 考虑布局时将热源分散，避免热堆积影响周边元件。
六、选型与使用注意事项
- 若电路工作在高开关频率或需要极低导通损耗，应比较更低RDS(on)或更大封装的MOSFET；
- 设计驱动电路时以10V栅压为参考点，注意门极驱动能量与开关损耗平衡；
- 注意器件制造商关于最大栅-源电压、瞬态浪涌电流与绝对极限的完整规格，避免超限应力；
- 在有反向恢复或高应力脉冲条件下，参考Crss与Coss对电路性能的影响并做好抑制。
七、总结
NTR4503NT1G 在30V/2.5A级别中提供了体积小、驱动要求适中并兼顾效率的选择，尤其适合对封装面积敏感且电流在数安培范围内的应用。合理的PCB散热设计与驱动方案能充分发挥其性能，若需更高电流或更低RDS(on)，建议按应用场景向上选型或并联使用。
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