WMSIC Electronic Components

UMW BC846B

ModelBC846B
PackageSOT-23
BrandUMW
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
UMW BC846B
Type
UMW
Minimum package
3000 编带

Technical parameters

Electronic Component
Electronic Component
Electronic Component
UMW
Electronic Component
BC846B
Electronic Component
1
Package
SOT-23
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.033g
Electronic Component
1
Electronic Component
BM0228218881
Operating Temperature
65℃~+150℃
Transistor Type
NPN
Frequency(f T)
100MHz
Power Dissipation(Pd)
200mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BC846B 产品概述(UMW·友台半导体)

一、产品简介

BC846B 为 UMW(友台半导体)出品的一款通用 NPN 小功率晶体管,封装为 SOT-23,适用于便携式与板载低功耗信号处理场合。器件具备高电压耐受与较高电流增益的平衡特性,便于在放大与开关两类电路中应用。

二、主要参数与特性

  • 晶体管类型:NPN
  • 最大集电极电流 Ic:100 mA
  • 集射极击穿电压 Vceo:65 V
  • 功耗 Pd(总耗散):200 mW(SOT-23 封装)
  • 直流电流增益 hFE:典型 200 @ Ic=2 mA, VCE=5 V
  • 特征频率 fT:约 100 MHz(典型)
  • 集电极截止电流 Icbo:典型 100 nA(低漏电流)
  • 集射极饱和电压 VCE(sat):约 500 mV(在适当基极驱动下)
  • 射基极反向击穿电压 Vebo:6 V
  • 工作温度范围:-65 ℃ ~ +150 ℃

三、电气特性要点

BC846B 在小信号区表现优良:hFE 在低电流(约 2 mA)时可达 200,便于构建高增益前置放大器;fT≈100 MHz 支持高频小信号放大与缓冲。低 Icbo(100 nA)利于低电流、低泄漏电路设计。需要注意功耗限制:在最大 Ic=100 mA 下,如果 VCE 较大,会超出 Pd(200 mW)——例如 100 mA 时允许的最大 VCE 仅为 Pd/Ic = 2 V,因此高电流工作应限制 VCE 或改用更大功耗封装。

四、封装与散热建议

SOT-23 小型封装适合密集贴装电路,但热阻较高。推荐在 PCB 上为器件的引脚和焊盘配置足够的铜箔面积(散热地/散热线)并采用多层板接地铜箔以提高功耗承载能力。实际设计中应计算功耗并确保结温不超过规定的工作温度上限。

五、典型应用

  • 小信号放大器、前置放大与音频放大低阶级
  • 开关驱动(低功率继电器、指示 LED 驱动)
  • 电平转换、缓冲、采样与保持前级
  • 射频前端的低噪声放大器(在fT限制内)
  • 电池供电便携设备中的通用开关/放大单元

六、使用建议与注意事项

  • 避免在 VBE 反向超过 6 V 的情况,以防损伤基极-发射极结。
  • 在需要饱和导通时,保证足够的基极驱动电流以达到约 500 mV 的 VCE(sat) 典型值。
  • 对于持续高电流或高 VCE 应用,应降低工作电流或采用更高功耗器件。
  • 设计 PCB 时扩大焊盘和铜箔面积,并考虑热仿真验证结温。
  • 储存与焊接过程中注意 ESD 与热应力保护,遵循厂家焊接温度曲线。

BC846B 在通用电子设计中提供了高增益、较高耐压与低漏电流的良好组合,适合多种小信号与低功耗开关应用。但在高功耗或持续大电流场合,应重点关注热管理与安全工作区限制。

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