WMSIC Electronic Components

UMW LESD5Z5.0CT1G

ModelLESD5Z5.0CT1G
PackageSOD-523
BrandUMW
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
UMW LESD5Z5.0CT1G
Type
UMW
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
UMW
Electronic Component
LESD5Z5.0CT1G
Electronic Component
1
Package
SOD-523
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.028g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
15pF
Voltage
9V
Electronic Component
BM0225985377
Voltage
15V
Electronic Component
IEC 61000-4-4;IEC 61000-4-2
Current(Ir)
1uA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

LESD5Z5.0CT1G 产品概述

一、产品简介

LESD5Z5.0CT1G 是 UMW(友台半导体)推出的一款用于静电与浪涌保护的瞬态抑制二极管(TVS/ESD),采用微型 SOD-523 封装,针对单路数字或模拟信号线的瞬态过压和静电放电事件提供快速响应保护。器件专为便携式设备和高速接口的空间受限场合设计,兼顾低电容与高能量吸收能力。

二、关键参数解读

  • 反向截止电压 Vrwm:5V —— 器件在正常工作时可承受的最大反向电压;适用于 5V 电源/信号系统保护。
  • 击穿电压 Vbr:9V —— 进入雪崩导通区的电压门槛;高于 Vrwm。
  • 钳位电压 Vc:15V —— 在 8/20μs 测试脉冲下的典型钳位电压,决定受保护节点在冲击时的最高电压水平。
  • 峰值脉冲功率 Ppp:75W @ 8/20μs —— 表明器件能吸收单次 8/20μs 脉冲的能量能力。
  • 结电容 Cj:15pF —— 低电容设计,适用于对信号完整性有要求的高速线路(如 USB2.0、UART 等)。
  • 反向电流 Ir:1μA —— 在 Vrwm 下的漏电流较小,有利于低功耗应用。
  • 通道数:单路;类型:ESD;防护等级符合 IEC 61000-4-2(静电放电)与 IEC 61000-4-4(电快速瞬变)标准。

三、主要特性与优势

  • 小体积(SOD-523)适合表面贴装,节省 PCB 面积。
  • 低结电容(15pF),减少对高速信号的干扰。
  • 高脉冲吸收能力(75W@8/20μs),可应对典型的静电和浪涌事件。
  • 低漏电流,适合电池供电或低功耗系统。
  • 符合 IEC 标准,可靠性高,易于通过系统级电磁兼容(EMC)验证。

四、典型应用场景

  • 移动终端与便携式设备的 I/O 口、按键和充电接口保护;
  • USB、串口、TTL 电平接口的防护;
  • 智能家居、物联网设备中的信号线与小功率电源线保护;
  • 需要在极小封装下实现基本浪涌/静电防护的场合。

五、安装与使用建议

  • 器件应尽可能靠近被保护的输入/输出引脚布置,输入端到 TVS 的走线要尽量短且宽,减小感抗与寄生阻抗。
  • 将器件地端直接铺接到接地平面,必要时在地与地平面间设置多点过孔以改善回流路径。
  • 对高速差分或敏感信号线,事先评估 15pF 电容对信号完整性的影响,必要时选用更低电容的保护元件或在器件前端加匹配措施。
  • 对于可能出现重复高能脉冲的应用,结合系统设计做热/能量评估,必要时增加系列阻抗或多级保护设计以分担能量。

六、注意事项

  • TVS 为被动保护元件,不应作为长时间稳态过压的主手段;若系统可能长期超出 Vrwm,应选用合适的稳压或限流方案。
  • 在最终产品认证或 EMC 测试中,应进行实际系统级测试以验证保护效果;仅器件参数不能完全替代系统验证。
  • 对封装引脚方向与焊盘设计应参照厂商推荐封装图纸,避免焊接热应力或机械应力引起可靠性下降。

七、总结

LESD5Z5.0CT1G 以其微型封装、低电容和良好的瞬态能量吸收能力,适合对空间和信号完整性有严格要求的接口保护应用。合理的 PCB 布局与系统级保护设计能够充分发挥其性能,为产品可靠性与抗扰度提供有效保障。

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