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UMW 8205A
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- UMW 8205A
- Type
- UMW
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- UMW
- Electronic Component
- 8205A
- Electronic Component
- 1
- Package
- SOT-23-6
- Electronic Component
- 2 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.038g
- Electronic Component
- 1
- Electronic Component
- BM0226612892
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 830mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
- Capacitor(Ciss)
- 630pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：8205A 场效应管 (MOSFET)
概念与应用
8205A 是一款高效能的场效应管（MOSFET），属于 N 沟道类型，具有较低的导通电阻和优秀的热性能，非常适合于多种电子设备的功率管理和开关电路。由于其良好的电性能和宽广的工作温度范围，8205A 可应用于移动设备、LED 驱动器、工业控制、消费电子、DC-DC 转换器等领域。
主要参数
8205A 具有以下基础参数：
功率 (Pd)：830mW。这一功率输出使其适用于低功率应用。
漏源电压 (Vdss)：最大可承受电压为 20V，适合用在低压电源系统中。
连续漏极电流 (Id)：5A，表明其可以处理的电流范围适中，能满足大部分中小功率场合的需求。
导通电阻 (RDS(on))：36mΩ @ 2.5V, 3A，该参数说明其在导通状态下损耗较小，从而提高了整体效率。
反向传输电容 (Crss@Vds)：145pF，这意味着在工作频率较高的应用中，其开关速度相对较快。
输入电容 (Ciss@Vds)：630pF @ 10V，表示其在开关操作时的输入负载相对较低，提高了驱动电路的效率。
栅极电荷 (Qg@Vgs)：23nC @ 20V，此参数反映了栅极的充电需求，在驱动设计中必须考虑，其较小的电荷值有助于提高开关速度。
阈值电压 (Vgs(th)@Id)：1.2V @ 250uA，具有良好的开关特性，确保在较低的栅极电压下能够快速导通。
工作温度范围：-55℃~+150℃，使其在极端环境下依然能够稳定工作，适合各种工业应用。
封装与设计
8205A 采用 SOT-23-6 封装，其小巧的尺寸非常适合布线密集的小型电路板。SOT-23-6 封装设计有助于减小PCB面积，同时提高散热效率。该组件的结构设计使得焊接与嵌入电路板的过程方便且可靠，适用于大规模生产。
性能优势
高效率：由于其低导通电阻，8205A 能够有效降低功率损耗，提升整体电路效率。
高可靠性：工作的温度范围广泛，使其在各种环境下都能稳定工作，降低故障率。
灵活适用：8205A 可用于多种功率控制和转换应用中，从简单的开关电路到复杂的 DC-DC 转换器等场景。
快速响应：较低的输入电容和栅极电荷意味着在高频开关应用中表现卓越，适合现代高效电源设计需求。
总结
8205A MOSFET 是一款高性能、高可靠性的电子元器件，适合各种应用场合。其出色的电气特性、宽广的工作条件以及小巧的封装设计，使其成为了工程师在选择场效应管时的优选产品。在进行电路设计时，如果对功率、效率和空间都有高要求，8205A 无疑是一款理想的解决方案。
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