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UTC D882SSG-P-AE3-R D882SSG
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- UTC D882SSG-P-AE3-R
- Type
- UTC
- Minimum package
- 3000
Technical parameters
- Electronic Component
- UTC
- Electronic Component
- D882SSG-P-AE3-R
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.036g
- Electronic Component
- 1
- Electronic Component
- BM0229961261
- Transistor Type
- NPN
- Frequency(f T)
- 80MHz
- Power Dissipation(Pd)
- 10W
- Electronic Component
- 3000
- Collector Current(Ic)
- 3A
- Current (h FE)
- 160
- Voltage(Vebo)
- 5V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
D882SSG-P-AE3-R 产品概述
一、主要性能特点
D882SSG-P-AE3-R 为 UTC（友顺）出品的一款小封装 NPN 三极管，额定集电极电流 Ic = 3A，集—射极击穿电压 Vceo = 30V，耗散功率 Pd = 10W（封装 SOT-23）。直流电流增益 hFE 标称 160（测量条件：Ic = 1A，Vce = 2V），特征频率 fT ≈ 80MHz，集电极截止电流 Icbo ≈ 1µA，集电极饱和电压 VCE(sat) 典型值 500mV（在 2A 及 0.2A 条件下），发—基击穿电压 Vebo = 5V。该器件在中低压大电流场合兼顾放大与开关性能，适合空间受限的应用。
二、性能解读与设计意义
- Ic = 3A 表示器件能处理较大的脉冲或连续电流，适用于驱动型负载。
- Vceo = 30V 适合 12V 或 24V 级别的电源系统，但不适合高压应用。
- hFE = 160（1A）表明在大电流工作点具有良好增益，基极驱动电流需求相对较低，便于简化驱动电路。
- fT = 80MHz 可支持中频放大与快速开关，适合开关转换器和脉冲驱动场景。
- 低 Icbo（1µA）有利于降低静态漏电损耗，而 VCE(sat) 在高电流时仍需关注功耗和温升。
三、封装与热管理建议
SOT-23 小封装有利于高密度 PCB 布局，但散热能力有限。尽管标称 Pd = 10W，实际设计中应：
- 在 PCB 上增加铜箔散热区并与脚位热层相连；
- 对连续大电流工作进行功耗与结温计算，必要时采用强制风冷或改用大封装器件；
- 注意环境温度与结-周围温度的降额规则，确保不超出安全工作区（SOA）。
四、使用注意事项
- 避免反向基极电压超过 Vebo=5V，以防基极-发射极击穿；
- 设计基极限流或驱动电路时按 hFE 与最大 Ic 考虑余量，推荐使用适当的基极电阻或驱动缓冲；
- 在频繁开关或大电流瞬态下注意 VCE(sat) 导致的瞬时功耗和应力；
- 若应用对低饱和压有更高要求，应进行实际测试以确认在目标工况下的 VCE(sat)。
五、典型应用场景
- 线路驱动与继电器/小电机驱动；
- 低压开关电源次级或同步整流驱动；
- 音频功率级或功率放大器的驱动级；
- 常规功率开关、信号放大与中频快速切换场合。
六、选型与替代建议
若需要更高耐压或更强散热能力，可考虑封装更大、Vceo 更高（如 60V）或 Pd 更高的功率晶体管；若对开关速度有更严格要求，可选 fT 更高的高速器件。D882SSG-P-AE3-R 在空间受限且需要 2–3A 等级性能的低压应用中性价比突出。
综上所述，D882SSG-P-AE3-R 是一款在 SOT-23 封装下提供较大电流能力与较好增益的 NPN 功率晶体管，适合对体积、驱动电流与中频性能有综合要求的设计场景。
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