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UTC 2P50G-TN3-R 2P50G
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- UTC 2P50G-TN3-R
- Type
- UTC
- Minimum package
- 2500
Technical parameters
- Electronic Component
- UTC
- Electronic Component
- 2P50G-TN3-R
- Electronic Component
- 1
- Package
- TO-252-2
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.501g
- Electronic Component
- 1
- Electronic Component
- BM0231051893
- Operating Temperature
- 40℃~+150℃
- Power Dissipation(Pd)
- 41W
- Electronic Component
- 2500
- Voltage(Vdss)
- 500V
- Capacitor(Ciss)
- 343pF
- Output Capacitor(Coss)
- 59pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2P50G-TN3-R 产品概述
一、产品简介
2P50G-TN3-R 为 UTC（友顺）出品的一款高压 P 沟道场效应晶体管，单个器件设计，适用于高压场合的开关与保护应用。器件以 TO-252-2（DPAK）表面贴装封装提供，适配中小功率印制板安装及散热处理。
二、主要性能参数
- 类型：P 沟道 MOSFET
- 漏-源耐压 Vdss：500 V
- 连续漏极电流 Id：2 A（限于额定散热条件）
- 导通电阻 RDS(on)：8.5 Ω @ Vgs=10 V (测试电流 1 A)
- 阈值电压 Vgs(th)：约 2 V
- 总耗散功率 Pd：41 W（依散热条件而定）
- 栅极电荷 Qg：11.5 nC @ 10 V（栅驱动能量需求参考）
- 输入电容 Ciss：343 pF @ 100 V
- 输出电容 Coss：59 pF
- 反向传输电容 Crss：9 pF @ 25 V
- 工作温度范围：-40 ℃ ~ +150 ℃
- 封装：TO-252-2（DPAK）
三、典型应用场景
- 高压侧开关与反向保护电路（高压断开/接通、反接保护）
- 工业与电力电子中高压控制回路、隔离开关
- 高压测量与测试设备中的开关元件
- 需要高压耐受但低到中等导通电流的场合
四、驱动与开关特性
器件在 Vgs=10 V 时给出的 RDS(on) 与 Qg 数据表明，需要相对较大的栅压幅值与瞬态驱动电流以实现快速导通/关断。作为 P 沟道器件，栅-源电压通常以负极性相对于源极来控制（具体驱动电压请参见厂方完整数据手册）。Ciss、Coss 与 Crss 值对开关损耗与响应速度有直接影响，设计时应在驱动器选型与死区时间设置上予以考虑。
五、热设计与封装注意事项
TO-252-2 为小型功率封装，器件额定耗散 41 W 需在良好散热条件下才能接近其上限。建议在 PCB 设计中提供充足的铜箔散热面积与通孔散热通道，并在实际应用中验证结温与封装温升。长时间高温工作会影响器件寿命与稳定性。
六、使用与储存建议
- 设备为静电敏感元件，生产与装配过程中需采取 ESD 防护措施。
- 避免超出数据手册指定的最大栅-源电压与漏-源电压。
- 储存与操作环境应避免潮湿与剧烈温度波动，焊接工艺参考封装厂方建议。
七、选型与工程注意事项
2P50G-TN3-R 适合高压、低至中等电流的开关与保护场合；若应用中需要较低导通损耗或较大持续电流，应考虑并联器件或选择更低 RDS(on) 的替代型号。最终应用设计请结合厂方完整规格书进行电气与热仿真验证，并在样机阶段进行可靠性测试以确认系统级表现。
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