Model & package intelligence
Model text, package form, tray or reel details, and visual evidence are reviewed together before RFQ feedback.
UTC 2N6718G-B-AB3-R 2N6718G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- UTC 2N6718G-B-AB3-R
- Type
- UTC
- Minimum package
- 4000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- UTC
- Electronic Component
- 2N6718G-B-AB3-R
- Electronic Component
- 1
- Package
- SOT-89-3
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.153g
- Electronic Component
- 1
- Electronic Component
- BM0259314251
- Operating Temperature
- 40℃~+125℃
- Transistor Type
- NPN
- Frequency(f T)
- 50MHz
- Power Dissipation(Pd)
- 1W
- Electronic Component
- Electronic Component
- Electronic Component
- 4000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2N6718G-B-AB3-R 产品概述
一、产品简介
2N6718G-B-AB3-R 是 UTC（友顺）出品的一颗高电流、耐压型 NPN 晶体管，采用 SOT-89-3 封装，适用于空间受限且要求中等功耗的功率放大与开关场合。器件针对 1A 级别负载设计，兼顾低饱和压与较高的直流电流增益，便于驱动小信号源完成较大输出。
二、主要电气参数
- 晶体管类型：NPN（单只，数量：1）
- 集电极电流 Ic：1A（最大）
- 集—射极击穿电压 Vceo：100V
- 耗散功率 Pd：额定 1W（典型应用中约 850mW）
- 直流电流增益 hFE：300（低电流区表现优良）
- 特征频率 fT：50MHz（适合中低频放大与开关）
- 集电极截止电流 Icbo：100nA（漏电小）
- 集—射极饱和电压 VCE(sat)：约 350mV（在规定 Ic/IB 条件下）
- 射—基极击穿电压 Vebo：5V
- 工作温度范围：-40℃ ～ +125℃
三、封装与热管理
SOT-89-3 封装体积小巧，便于表面贴装和自动化生产。由于封装体积和散热面积有限，实际功耗受 PCB 铜箔面积与散热设计影响较大。建议在功率接近额定值时采用加大散热铜箔、过孔热通或在 PCB 铜面上增加散热区域，以保证长期可靠性。
四、典型应用场景
- 低压电源与线性调节器之前端开关/放大元件
- 驱动小型继电器、继电器线圈或中等负载的开关元件
- 音频前级、信号放大（中低频）
- 通信设备与工业控制中需较高耐压与中等频率的场合
- 汽车电子（温度范围允许，需考虑浪涌与短时纹波）
五、设计与使用建议
- 基极驱动：由于 hFE 高，可用较小基极电流驱动，但为保证开关速度与饱和状态，开关应用建议设计合适基极电阻或采用驱动器以控制 IB。
- 工作极限：避免 Veb 超过 5V，避免 Vce 超过 100V，注意热失控与安全工作区（SOA）。
- 漏电与偏流：Icbo 低，适合低漏电场合，但在高温时需关注漏电随温度上升的增加。
- 封装限制：SOT-89-3 热阻较高，长期大功耗请加强 PCB 散热或选更大功率封装。
如需样片、详细封装图或温度特性曲线，可按物料号 2N6718G-B-AB3-R 向供应商索取完整数据手册与可靠性报告。
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