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Model text, package form, tray or reel details, and visual evidence are reviewed together before RFQ feedback.
Vishay SI8821EDB-T2-E1 MOSFET SI8821EDB
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- VISHAY SI8821EDB-T2-E1
- Type
- VISHAY
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- VISHAY
- Electronic Component
- SI8821EDB-T2-E1
- Electronic Component
- 1
- Package
- 4-Microfoot
- Electronic Component
- 1 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.043g
- Electronic Component
- 1
- Electronic Component
- BM0264342757
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 500mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 440pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SI8821EDB-T2-E1 产品概述
一、概述
SI8821EDB-T2-E1 是 VISHAY 出品的一款 P 沟道 TrenchFET® 功率 MOSFET，额定漏源电压 -30V，连续漏极电流 -2.3A，脉冲峰值能力 Idm 可达 -15A。器件面向小功率高侧开关与电源管理应用，封装为紧凑型 4‑Microfoot，适合空间受限的便携与消费类电子产品。
二、关键参数（摘要）
- 极性：P‑MOSFET（单只）
- Vdss：-30V
- Id（连续）：-2.3A
- RDS(on)：135mΩ @ VGS = -4.5V
- Pd（耗散功率）：500mW
- VGS(th)：~ -0.6V（典型）
- Qg（总栅极电荷）：17nC @ 10V
- Ciss（输入电容）：440pF
- 工作温度：-55℃ ~ +150℃
- 封装：4‑Microfoot
三、主要特点与优势
- TrenchFET® 结构提供良好的导通与开关性能，适合中等电流场合。
- 低阈值（≈0.6V）便于在较低驱动电压下导通，利于电池供电系统。
- 紧凑封装有利于 PCB 面积优化与自动化贴装生产。
- 较高的脉冲电流能力满足短时启动或容性负载冲击。
四、典型应用
- 高侧负载开关与电源路径管理（便携式设备、电池保护）
- 反接保护、电源选择与切换电路
- 小功率 DC‑DC 输入/输出开关
- 快速断电保护与热插拔控制
五、设计与使用要点
- 热管理：器件 Pd 仅 500mW，需注意 PCB 铜箔散热与热阻配置，必要时并联或使用更大铜面积降低结温。
- 门极驱动：Qg = 17nC 意味着驱动电流需求中等，快速开关时应考虑驱动器能力及串联门极电阻以抑制振铃。
- 布局建议：尽量缩短、高电流回路加宽，靠近 MOSFET 放置电容与测量点以降低寄生电感。
- 工作电压与栅极限制：确认系统中最大 Vgs、Vds 在器件允许范围内，避免超压导致击穿或可靠性隐患。
- 瞬态能力：Idm 提示短时容许大电流，但长期仍以额定连续电流为准，设计时需考虑热耗散与循环寿命。
总结：SI8821EDB-T2-E1 以其小尺寸、适中的导通阻抗与合理的栅极特性，适合空间与功耗受限的高侧开关与电源管理场景。选型时重点评估热管理与门极驱动能力，以确保长期可靠工作。
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