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Vishay SI2333DS-T1-GE3 MOSFET SI2333DS
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- VISHAY SI2333DS-T1-GE3
- Type
- SOT-23-3
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- VISHAY
- Electronic Component
- SI2333DS-T1-GE3
- Electronic Component
- 1
- Package
- SOT-23-3
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.041g
- Electronic Component
- 1
- Electronic Component
- BM0226998104
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.25W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SI2333DS-T1-GE3 产品概述
一、主要性能概述
SI2333DS-T1-GE3 是 VISHAY（威世）出品的一款 P 沟道增强型 MOSFET，额定漏源电压 12V，典型场景为低电压电源路径和高侧开关。器件在 4.5V 驱动下导通电阻约 32mΩ，连续漏极电流 5.3A，适合移动设备与小功率电源管理应用。工作温度范围宽（-55℃ ～ +150℃），封装为 SOT-23-3，便于表面贴装和小面积布板。
二、关键规格要点
- 类型：P 沟道 MOSFET（高侧开关用）
- 漏源电压（Vdss）：12V
- 导通电阻（RDS(on)）：32mΩ @ VGS=4.5V（典型）
- 连续漏极电流（Id）：5.3A
- 门限电压（VGS(th)）：约 1V（典型）
- 总门极电荷（Qg）：18nC @ 4.5V
- 输入电容（Ciss）：1.1nF @ 6V；输出电容（Coss）：390pF；反向传输电容（Crss）：300pF @ 6V
- 功耗/耗散功率（Pd）：1.25W（器件/PCB 结合的散热限制）
- 封装：SOT-23-3
三、典型应用场景
- 电池供电设备的高侧开关与断电保护
- 电源路径切换与反向电流保护（电源选择）
- 便携式设备、便携式充电器的小功率负载开关
- 低压直流电路中的软开关或保护电路
四、封装与热管理
SOT-23-3 小封装便于在空间受限的产品中使用，但散热能力受限。额定耗散功率 1.25W 需在 PCB 上通过铜箔散热、热铜区与多层板热过孔来实现。实际应用中建议评估在最大电流和频繁开关时的结温上升，必要时增大铜厚或增加散热面积。
五、使用与设计注意事项
- 适当控制 VGS 幅值与极性，P 沟道在高侧工作时需使栅极相对于源极足够负以导通（参考数据表给定测试点）。
- 门极电荷 Qg 为 18nC，开关过程中产生的驱动能量和切换损耗不可忽视，驱动器或 MCU 输出需匹配。
- 高频切换时 Coss/Crss 导致的能量损耗显著，若频率较高建议评估功率损耗并考虑替代方案。
- 建议在栅极串联小电阻以抑制振荡并在源/漏侧加适当去耦电容稳定电源。
六、典型参考电路与 PCB 布局建议
- 高侧开关：源接电源、漏接负载，栅极通过上拉使其默认关断，通过驱动器拉低栅极使其导通。
- PCB 布局：缩短栅极和源/漏的回路，尽量将热敏元件邻近大铜箔并安排散热孔；在栅极附近放置驱动回流路径，去耦电容靠近电源端放置。
总结：SI2333DS-T1-GE3 在 12V 以内、需要小尺寸高侧开关的场合具有良好性价比。设计时应关注栅极驱动、切换损耗与 PCB 散热以发挥器件最佳性能。
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